Growth and characterization of low-threshold 1.3 μm GaAsSb quantum well laser

2003 ◽  
Author(s):  
Po-Wei Liu ◽  
Min-Han Lee ◽  
Hao-Hsiung Lin
Keyword(s):  
Quantum Well ◽  
Quantum Well Laser ◽  
Low Threshold

Impurity Free Vacancy Disordering Using Phosphorus Doped SiO2 and Pure SiO2 Caps

1996 ◽  
Vol 450 ◽  
Author(s):  
P. Cusumano ◽  
A. Saher Helmy ◽  
B. S. Ooi ◽  
R. M. De La Rue ◽  
A. C. Bryce ◽  
...  
Keyword(s):  
Quantum Well ◽  
Resonance Method ◽  
Lasing Wavelength ◽  
Quantum Well Laser ◽  
Fabry Perot ◽  
Extended Cavity ◽  
Low Threshold ◽  
Ridge Lasers ◽  
Phosphorus Doped ◽  
Pure Sio2

ABSTRACTA spatially selective quantum well intermixing process, using phosphorus-doped silica (SiO2:P) containing 5 wt% P to inhibit intermixing and pure SiO2 to enhance intermixing, is presented. The SiO2:P cap has been found to suppress bandgap shifts in both p-i-n and n-i-p GaAs/AlGaAs quantum well laser structures, with bandgap shift differences as large as 100 meV observed from samples capped with SiO2 and with SiO2:P after rapid thermal processing at temperatures as high as 950 °C for 60 s. Extended cavity ridge lasers exhibited low threshold currents with TE losses of 3.2 cm−1 measured in the passive waveguide sections at the lasing wavelength using the Fabry-Perot resonance method. This value is among the lowest reported so far using an impurity-free disordering technique.

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