ABSTRACTRecombination dynamics of InGaN/GaN multiple quantum wells (MQWs) with different
well thickness have been studied. From the behaviour of temperature dependent
photoluminescence, we find that the activation energy decreases with the well
thickness increasing. In addition, with temperature changing from 10K to room
temperature, the “W” shape of full width of half maximum
is also thickness related, and it becomes more obvious with the well thickness
increasing. These results indicate that the dominant recombination dynamics
change from exciton localization to quantum confined stark effect with well
thickness increasing. From our measurement, the InGaN/GaN MQWs with 3nm
thickness seems a turning point, which shows the best optimized optical and
structural properties.