Low-temperature deposition of silicon oxide films by microwave plasma CVD of TEOS

1990 ◽  
Vol 5 (4) ◽  
pp. 361-363 ◽  
Author(s):  
S K Ray ◽  
C K Maiti ◽  
S K Lahiri ◽  
N B Chakraborti
1992 ◽  
Vol 282 ◽  
Author(s):  
K. Hochberg ◽  
David A. Roberts

ABSTRACTA precursor for the LPCVD of silicon oxide films has been developed that extends the low temperature deposition range to 100°C. The chemical, 1,4 disilabutane (DSB), produces silicon oxide depositions similar to those of the higher temperature silane and diethylsilane (DES) processes. Optimum DSB processes require pressures below 300 mTorr, similar to silane, in contrast to DES pressures above 600 mTorr at 350°C. This results in poorer conformalities than those of DES, but the step coverages are still superior to those from silane oxides. The DSB films are low stress, carbon-free oxide layers that are suitable for temperature-sensitive underlayers and substrates such as photoresist, plastics, GaAs, and HgCdTe.


1988 ◽  
Vol 27 (Part 2, No. 10) ◽  
pp. L1962-L1965 ◽  
Author(s):  
Takuya Fukuda ◽  
Kazuo Suzuki ◽  
Shigeru Takahashi ◽  
Yasuhiro Mochizuki ◽  
Michio Ohue ◽  
...  

1989 ◽  
Vol 28 (Part 1, No. 6) ◽  
pp. 1035-1040 ◽  
Author(s):  
Takuya Fukuda ◽  
Michio Ohue ◽  
Naohiro Momma ◽  
Kazuo Suzuki ◽  
Tadashi Sonobe

1963 ◽  
Vol 110 (5) ◽  
pp. 465 ◽  
Author(s):  
Leslie L. Alt ◽  
Samuel W. Ing ◽  
Karl W. Laendle

1990 ◽  
Author(s):  
Hideo IZAWA ◽  
Yutaka NISHI ◽  
Masaya OKAMOTO ◽  
Hiroshi MORIMOTO ◽  
Mitsuo ISHII

2013 ◽  
Vol 46 (6) ◽  
pp. 063001 ◽  
Author(s):  
Takatoshi Yamada ◽  
Jaeho Kim ◽  
Masatou Ishihara ◽  
Masataka Hasegawa

Sign in / Sign up

Export Citation Format

Share Document