Low temperature deposition of SiN[sub x]:H using SiH[sub 4]–N[sub 2] or SiH[sub 4]–NH[sub 3] distributed electron cyclotron resonance microwave plasma
1997 ◽
Vol 15
(6)
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pp. 1919
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1997 ◽
Vol 15
(4)
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pp. 1951-1954
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1992 ◽
Vol 10
(5)
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pp. 2170
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2005 ◽
Vol 93
(7)
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pp. 1364-1373
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2003 ◽
Vol 27
(4)
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pp. 363-366
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1998 ◽
Vol 37
(Part 1, No. 4A)
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pp. 1960-1963
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1994 ◽
Vol 141
(3)
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pp. 849-853
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1999 ◽
Vol 38
(Part 1, No. 7B)
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pp. 4393-4396
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1997 ◽
Vol 15
(3)
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pp. 647-653
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