scholarly journals Low Temperature Deposition of Silicon Oxide Film by Microwave Plasma MOCVD.

1996 ◽  
Vol 47 (4) ◽  
pp. 372-375
Author(s):  
Hiroyuki TSUKUDA ◽  
Shigeru ITO ◽  
Kazuo AKASHI
Keyword(s):  
Low Temperature ◽  
Oxide Film ◽  
Silicon Oxide ◽  
Microwave Plasma ◽  
Silicon Oxide Film ◽  
Low Temperature Deposition ◽  
Temperature Deposition

The Deposition of Silicon Oxide Films by LPCVD at Temperatures as Low as 100°C from a New Liquid Source

1992 ◽  
Vol 282 ◽  
Author(s):  
K. Hochberg ◽  
David A. Roberts
Keyword(s):  
Low Temperature ◽  
Silicon Oxide ◽  
Oxide Films ◽  
Temperature Sensitive ◽  
Oxide Layers ◽  
Low Temperature Deposition ◽  
Liquid Source ◽  
Temperature Deposition ◽  
Higher Temperature

ABSTRACTA precursor for the LPCVD of silicon oxide films has been developed that extends the low temperature deposition range to 100°C. The chemical, 1,4 disilabutane (DSB), produces silicon oxide depositions similar to those of the higher temperature silane and diethylsilane (DES) processes. Optimum DSB processes require pressures below 300 mTorr, similar to silane, in contrast to DES pressures above 600 mTorr at 350°C. This results in poorer conformalities than those of DES, but the step coverages are still superior to those from silane oxides. The DSB films are low stress, carbon-free oxide layers that are suitable for temperature-sensitive underlayers and substrates such as photoresist, plastics, GaAs, and HgCdTe.

Low-Temperature Deposition of Microcrystalline Silicon by Microwave Plasma-Enhanced Sputtering

1999 ◽  
Vol 67-68 ◽  
pp. 119-124
Author(s):  
P. Müller ◽  
W.M. Holber ◽  
W. Henrion ◽  
E. Nebauer ◽  
Viktor Schlosser ◽  
...  
Keyword(s):  
Low Temperature ◽  
Microwave Plasma ◽  
Microcrystalline Silicon ◽  
Low Temperature Deposition ◽  
Temperature Deposition
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