Enhancing spin injection efficiency through half-metallic miniband conduction in a spin-filter superlattice

2016 ◽  
Vol 28 (5) ◽  
pp. 056003 ◽  
Author(s):  
Yi-Hang Yang ◽  
Lin Li ◽  
Fen Liu ◽  
Zhi-Wei Gao ◽  
Guo-Xing Miao
Author(s):  
Zhao Chen ◽  
Guojun Li ◽  
Haidi Wang ◽  
Qiong Tang ◽  
ZhongJun Li

Phosphorene-based device with fcc Co(111) electrodes shows excellent spin transport characteristics: large tunnel magnetoresistance ratio and stable spin injection efficiency.


2015 ◽  
Vol 91 (14) ◽  
Author(s):  
Tetsuya Uemura ◽  
Takafumi Akiho ◽  
Yuya Ebina ◽  
Masafumi Yamamoto

2005 ◽  
Vol 86 (5) ◽  
pp. 052901 ◽  
Author(s):  
R. Wang ◽  
X. Jiang ◽  
R. M. Shelby ◽  
R. M. Macfarlane ◽  
S. S. P. Parkin ◽  
...  

2018 ◽  
Vol 32 (07) ◽  
pp. 1850098 ◽  
Author(s):  
Yan-Ni Wen ◽  
Peng-Fei Gao ◽  
Ming-Gang Xia ◽  
Sheng-Li Zhang

Half-metallic ferromagnetism (HMFM) has great potential application in spin filter. However, it is extremely rare, especially in two-dimensional (2D) materials. At present, 2D materials have drawn international interest in spintronic devices. Here, we use ab initio density functional theory (DFT) calculations to study the structural stability and electrical and magnetic properties of the MoS2-based 2D superlattice formed by inserting graphene hexagonal ring in [Formula: see text] MoS2 supercell. Two kinds of structures with hexagonal carbon ring were predicted with structural stability and were shown HMFM. The two structures combine the spin transport capacity of graphene with the magnetism of the defective 2D MoS2. And they have strong covalent bonding between the C and S or Mo atoms near the interface. This work is very useful to help us to design reasonable MoS2-based spin filter.


2011 ◽  
Author(s):  
Wei Han ◽  
J. R. Chen ◽  
K. M. McCreary ◽  
H. Wen ◽  
R. K. Kawakami

2004 ◽  
Vol 85 (22) ◽  
pp. 5260-5262 ◽  
Author(s):  
W. M. Chen ◽  
I. A. Buyanova ◽  
K. Kayanuma ◽  
Z. H. Chen ◽  
A. Murayama ◽  
...  

2005 ◽  
Vol 97 (10) ◽  
pp. 103907 ◽  
Author(s):  
S. Agrawal ◽  
M. B. A. Jalil ◽  
K. L. Teo ◽  
Y. F. Liew

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