Hopping conduction and resonant tunnelling in amorphous silicon microstructures

1994 ◽  
Vol 6 (13) ◽  
pp. 2583-2594 ◽  
Author(s):  
A I Yakimov ◽  
N P Stepina ◽  
A V Dvurechenskii
Keyword(s):  
Amorphous Silicon ◽  
Hopping Conduction ◽  
Resonant Tunnelling ◽  
Silicon Microstructures

Hopping conduction in amorphous silicon-chromium films at very low temperature

2014 ◽  
Author(s):  
M. Errai ◽  
A. El Kaaouachi ◽  
H. El Idrissi ◽  
A. Zatni ◽  
A. Narjis ◽  
...  
Keyword(s):  
Low Temperature ◽  
Amorphous Silicon ◽  
Hopping Conduction ◽  
Chromium Films ◽  
Very Low Temperature

The application of the extended pair approximation to hopping conduction in r.f. sputtered amorphous silicon

1988 ◽  
Vol 58 (2) ◽  
pp. 153-169 ◽  
Author(s):  
A. R. Long ◽  
J. Mcmillan ◽  
N. Balkan ◽  
S. Summerfield
Keyword(s):  
Amorphous Silicon ◽  
Pair Approximation ◽  
Hopping Conduction

Low-dimensional hopping conduction in porous amorphous silicon

1995 ◽  
Vol 205 (3-4) ◽  
pp. 298-304 ◽  
Author(s):  
A.I. Yakimov ◽  
N.P. Stepina ◽  
A.V. Dvurechenskii ◽  
L.A. Scherbakova
Keyword(s):  
Amorphous Silicon ◽  
Hopping Conduction ◽  
Low Dimensional

Electrical Conductivity and Structural Order of p-Type Amorphous Silicon Thin Films

2014 ◽  
Vol 1757 ◽  
Author(s):  
K. Shrestha ◽  
D. Whitfield ◽  
V. C. Lopes ◽  
A. J. Syllaios ◽  
C.L. Littler
Keyword(s):  
Thin Films ◽  
Amorphous Silicon ◽  
Raman Spectra ◽  
Chemical Vapor ◽  
Dark Conductivity ◽  
Range Order ◽  
Total Conductivity ◽  
Hopping Conduction ◽  
Electrical Measurements ◽  
Hydrogen Incorporation

ABSTRACTThe dependence of dark conductivity and room temperature Raman spectra on boron and hydrogen incorporation in thin films of hydrogenated amorphous silicon (a-Si:H) prepared by plasma enhanced chemical vapor deposition was investigated. It was found that the dominant conductivity is Mott variable range hopping conduction. However, at lower temperatures, Efros-Shklosvkii hopping conduction is observed and contributes to the total conductivity. For structural characterization, transverse optical (TO) and transverse acoustic (TA) modes of the Raman spectra were studied to relate changes in short- and mid-range order to the effects of boron and hydrogen incorporation. With an increase of hydrogen incorporation and/or substrate temperature, both short and mid-range order improve, whereas the addition of boron results in the degradation of the short range order. The line width and frequency of the Raman TO Raman peak correlate with electrical measurements and suggest that this technique can be used for non-destructive characterization of a-Si:H.

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