Coupling effects of refractive index discontinuity, spot size and spot location on the deflection sensitivity of optical-lever based atomic force microscopy

2008 ◽  
Vol 19 (23) ◽  
pp. 235501 ◽  
Author(s):  
Yu Liu ◽  
Jun Yang
Keyword(s):  
Atomic Force Microscopy ◽  
Refractive Index ◽  
Spot Size ◽  
Coupling Effects ◽  
Force Microscopy ◽  
Atomic Force ◽  
Optical Lever

scholarly journals Топография поверхности и оптические характеристики тонких пленок AlN на подложке GaAs (100), полученных методом реактивного ионно-плазменного распыления

2019 ◽  
Vol 45 (5) ◽  
pp. 38
Author(s):  
Е.В. Фомин ◽  
А.Д. Бондарев ◽  
A.I. Rumyantseva ◽  
T. Maurer ◽  
Н.А. Пихтин ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Refractive Index ◽  
Surface Structure ◽  
Optical Characteristics ◽  
Process Conditions ◽  
Antireflection Coatings ◽  
Force Microscopy ◽  
Plasma Sputtering ◽  
Atomic Force ◽  
Ion Plasma

AbstractA study of the surface topography and optical characteristics of thin AlN films used as passivating and antireflection coatings deposited on n -GaAs (100) substrates by reactive ion-plasma sputtering is reported. It was found that the process conditions affect the structure and the optical characteristics of the films, which makes it possible to obtain coatings with prescribed parameters. An analysis of the results furnished by ellipsometry and atomic-force microscopy of the surface shows that the refractive index of the films is correlated with the surface structure.

Influence of Thermal Annealing on the Properties of Sputtered Si Rich Silicon Oxide Films

2010 ◽  
Vol 159 ◽  
pp. 101-104
Author(s):  
Emil Manolov ◽  
Mario Curiel ◽  
Nicola Nedev ◽  
Diana Nesheva ◽  
Juan Terrazas ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Atomic Force Microscopy ◽  
Refractive Index ◽  
Photoelectron Spectroscopy ◽  
Silicon Oxide ◽  
High Temperature Annealing ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Variable Angle Spectroscopic Ellipsometry

Thin SiOx films deposited by reactive r.f. magnetron sputtering of Si at partial pressure ratios R between oxygen and argon in the range 15%-0.03% are studied. X-ray photoelectron spectroscopy and Variable angle spectroscopic ellipsometry prove enrichment with Si of the layers deposited at R < 0.5 %. Ellipsometric data give information about the refractive index and extinction coefficient of the films. Atomic Force Microscopy results show that for all samples high temperature annealing at 1000oC leads to a decrease of the surface roughness.

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