Growth mechanism and diameter control of well-aligned small-diameter ZnO nanowire arrays synthesized by a catalyst-free thermal evaporation method

2009 ◽  
Vol 20 (49) ◽  
pp. 495604 ◽  
Author(s):  
Su Li ◽  
Xiaozhong Zhang ◽  
Bin Yan ◽  
Ting Yu
2009 ◽  
Vol 24 (5) ◽  
pp. 998-1002
Author(s):  
Bo LIU ◽  
Fa-Zhan WANG ◽  
Gu-Zhong ZHANG ◽  
Chao ZHAO ◽  
Si-Cong YUAN

2011 ◽  
Vol 58 (6) ◽  
pp. 817-821 ◽  
Author(s):  
Yu-Tung Yin ◽  
Yen-Zhi Chen ◽  
Ching-Hsiang Chen ◽  
Liang-Yih Chen

2011 ◽  
Vol 335-336 ◽  
pp. 1402-1405
Author(s):  
Zhe Hu ◽  
Wei Guang Yang ◽  
Sheng Liu ◽  
Ke Tang ◽  
Lin Jun Wang ◽  
...  

SnS is a promising p-type semiconductor material for low-cost and low-toxic solar cells due to its exciting properties, such as high absorption in the visible range, little toxicity, inexpensiveness, and so on. The CdS nano-layer used as buffer layer of ZnO nanowire arrays/CdS/SnS thin film solar cells was prepared by thermal evaporation method. X-ray diffraction (XRD), scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDS), atomic force microscopy (AFM), UV-Vis spectra, Hall effect measurement system and I-V measurement system were used to characterize the ZnO nanowire arrays/CdS/SnS thin film solar cells. It is found that the CdS nano-layer plays a key role in reducing the leakage current.


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