Fabrication and Growth Mechanism of Zn1-xCdxO Nanotubes by Thermal Evaporation Method

2009 ◽  
Vol 24 (5) ◽  
pp. 998-1002
Author(s):  
Bo LIU ◽  
Fa-Zhan WANG ◽  
Gu-Zhong ZHANG ◽  
Chao ZHAO ◽  
Si-Cong YUAN
Keyword(s):  
Growth Mechanism ◽  
Thermal Evaporation ◽  
Thermal Evaporation Method ◽  
Evaporation Method

Preparation and growth mechanism of β-SiC nanowires by using a simplified thermal evaporation method

2015 ◽  
Vol 419 ◽  
pp. 20-24 ◽  
Author(s):  
Haitao Liu ◽  
Zhaohui Huang ◽  
Minghao Fang ◽  
Yan-gai Liu ◽  
Xiaowen Wu
Keyword(s):  
Growth Mechanism ◽  
Thermal Evaporation ◽  
Thermal Evaporation Method ◽  
Evaporation Method ◽  
Sic Nanowires

Synthesis and Growth Mechanism of SiC/SiO2 Core-Shell Nanowires by Thermal Evaporation Method

2014 ◽  
Vol 617 ◽  
pp. 195-198 ◽  
Author(s):  
Noppasint Jiraborvornpongsa ◽  
Masamitsu Imai ◽  
Katsumi Yoshida ◽  
Toyohiko Yano
Keyword(s):  
Growth Mechanism ◽  
Thermal Evaporation ◽  
Digital Camera ◽  
Silicon Powder ◽  
Inert Atmosphere ◽  
Core Shell ◽  
Thermal Evaporation Method ◽  
Evaporation Method ◽  
Shell Nanowires ◽  
Co Gas

In this study, SiC/SiO2 core-shell nanowires (SiCNWs) were fabricated by thermal evaporation method without any catalyst, using pre-oxidized silicon powder and methane (CH4) gas as precursors. The reaction temperature was 1340°C in an inert atmosphere. The SiCNWs produced by this process had a single crystal β-SiC core ranging from 20 to 80 nm in diameter and low-crystalline SiO2 shell about 10-20 nm thick, and up to 1 mm long. The exhaust gas from the production system was analyzed by gas chromatography and the growth activity of SiCNWs was captured by digital camera during a soaking period. From the results, CO gas was detected only when SiCNWs were growing and was not found when methane gas was stopped. It was clarified that CO gas was produced as a by-product during the formation of SiCNWs. The formation mechanism of SiCNWs synthesized by thermal evaporation method was suggested to be oxide-assisted growth mechanism.

Synthesis of tungsten oxide comblike nanostructures

2008 ◽  
Vol 23 (10) ◽  
pp. 2657-2661 ◽  
Author(s):  
Kunquan Hong ◽  
Maohai Xie ◽  
Rong Hu ◽  
Huasheng Wu
Keyword(s):  
Tungsten Oxide ◽  
Growth Mechanism ◽  
Thermal Evaporation ◽  
Growth Parameters ◽  
Second Step ◽  
Thermal Evaporation Method ◽  
Evaporation Method ◽  
Comb Structure ◽  
Reactor Pressure ◽  
High Reactor

Tungsten oxide comblike nanostructures were synthesized using a two-step thermal evaporation method. The first step involving high reactor pressure and temperature was to synthesize the cores of the comb structures, upon which the teeth of the comb were grown in the second step using low operation pressures and temperatures. The teeth of the comb structure are well aligned and vertical to the side surfaces of the cores. The effects of growth parameters were examined, and the growth mechanism was investigated.

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