The growth of silica and silica-clad nanowires using a solid-state reaction mechanism on Ti, Ni and SiO2layers

2010 ◽  
Vol 21 (29) ◽  
pp. 295603 ◽  
Author(s):  
Parul Sharma ◽  
J V Anguita ◽  
V Stolojan ◽  
S J Henley ◽  
S R P Silva
2003 ◽  
Vol 18 (1) ◽  
pp. 4-7 ◽  
Author(s):  
Y. C. Sohn ◽  
Jin Yu ◽  
S. K. Kang ◽  
W. K. Choi ◽  
D. Y. Shih

The reaction mechanism between electroless Ni–P and Sn was investigated to understand the effects of Sn on solder reaction-assisted crystallization at low temperatures as well as self-crystallization of Ni–P at high temperatures. Ni3Sn4 starts to form in a solid-state reaction well before Sn melts. Heat of reaction for Ni3Sn4 was measured during the Ni–P and Sn reaction (241.2 J/g). It was found that the solder reaction not only promotes crystallization at low temperatures by forming Ni3P in the P-rich layer but also facilitates self-crystallization of Ni–P by reducing the transformation temperature and heat of crystallization. The presence of Sn reduces the self-crystallization temperature of Ni–P by about 10 °C. The heat of crystallization also decreases with an increased Sn thickness.


2017 ◽  
Vol 46 (10) ◽  
pp. 5563-5569 ◽  
Author(s):  
Lu Gao ◽  
Wancheng Zhou ◽  
Fa Luo ◽  
Dongmei Zhu

2001 ◽  
Vol 105 (40) ◽  
pp. 9692-9698 ◽  
Author(s):  
J. A. Wang ◽  
R. Limas-Ballesteros ◽  
T. López ◽  
A. Moreno ◽  
R. Gómez ◽  
...  

2017 ◽  
Vol 53 (2-4) ◽  
pp. 177-194 ◽  
Author(s):  
Sun Woog Kim ◽  
Takuya Hasegawa ◽  
Mizuki Watanabe ◽  
Masaru Muto ◽  
Toshiya Terashima ◽  
...  

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