Thermal conductivity of Si–Ge quantum dot superlattices

2011 ◽  
Vol 22 (15) ◽  
pp. 155701 ◽  
Author(s):  
J B Haskins ◽  
A Kinaci ◽  
T Çağin
Keyword(s):  
Thermal Conductivity ◽  
Quantum Dot ◽  
Ge Quantum Dot

Anisotropic Thermal Conductivity of Ge Quantum-Dot and Symmetrically Strained Si/Ge Superlattices

2001 ◽  
Vol 1 (1) ◽  
pp. 39-42 ◽  
Author(s):  
W. L. Liu ◽  
T. Borca-Tasciuc ◽  
G. Chen ◽  
J. L. Liu ◽  
K. L. Wang
Keyword(s):  
Thermal Conductivity ◽  
Quantum Dot ◽  
Strained Si ◽  
Anisotropic Thermal Conductivity ◽  
Ge Quantum Dot

Cross-plane thermal conductivity of self-assembled Ge quantum dot superlattices

2003 ◽  
Vol 67 (16) ◽  
Author(s):  
J. L. Liu ◽  
A. Khitun ◽  
K. L. Wang ◽  
W. L. Liu ◽  
G. Chen ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Quantum Dot ◽  
Self Assembled ◽  
Ge Quantum Dot

Modeling and Fabrication of Cladded Ge Quantum Dot Gate Silicon MOSFETs Exhibiting 3-State Behavior

2008 ◽  
Vol 1108 ◽  
Author(s):  
Faquir C. Jain ◽  
Mukesh Gogna ◽  
Fuad Alamoody ◽  
Supriya Karmakar ◽  
Ernesto Suarez ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Threshold Voltage ◽  
Intermediate State ◽  
Gate Voltage ◽  
Inversion Layer ◽  
Similar Increase ◽  
State Behavior ◽  
Charge Neutralization ◽  
Ge Quantum Dot ◽  
State Device

AbstractThis paper presents electrical transfer (Id-Vg) and output (Id-Vds) characteristics of a GeOx-cladded-Ge quantum dot (QD) gate Si MOSFET devices. In QD gate FETs, the manifestation of an intermediate state ‘i” makes it a 3-state device. The intermediate state originates due to compensation of increment in the gate voltage by a similar increase in the threshold voltage, which occurs via charge neutralization in the QD gate due to transfer of charge from the inversion layer to either first or second of the two QD layers.

Anisotropic Thermal Conductivity of a Si/Ge Quantum Dot Superlattice

2000 ◽  
Author(s):  
Theodorian Borca-Tasciuc ◽  
Weili Liu ◽  
Jianlin Liu ◽  
Kang L. Wang ◽  
Gang Chen
Keyword(s):  
Thermal Conductivity ◽  
Quantum Dots ◽  
Molecular Beam ◽  
Conductivity Measurements ◽  
Transport Models ◽  
3Ω Method ◽  
Superlattice Structure ◽  
Anisotropic Thermal Conductivity ◽  
Ge Quantum Dot

Abstract In this work, we present experimental results on the in-plane and cross-plane thermal conductivity characterization of a Si/Ge quantum-dots superlattice structure. The quantum-dots superlattice was grown by molecular-beam-epitaxy and self-organization. The anisotropic thermal conductivity measurements are performed by a differential two-wire 3ω method. The measured in-plane and cross-plane thermal conductivity values show a different temperature behavior. The results are compared and explained with heat transport models in superlattices.

Nitride-stressor and quantum-size engineering in Ge quantum-dot photoluminescence wavelength and exciton lifetime

Nano Futures ◽  
2020 ◽  
Vol 4 (1) ◽  
pp. 015001
Author(s):  
Yu-Hong Kuo ◽  
Shih-Hsuan Chiu ◽  
Che-Wei Tien ◽  
Sheng-Di Lin ◽  
Wen-Hao Chang ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Quantum Size ◽  
Exciton Lifetime ◽  
Ge Quantum Dot

Optical Transitions in a Self-Assembled Ge Quantum Dot/Si Superlattice Measured by Photoreflectance Spectroscopy

2005 ◽  
Vol 44 (No. 33) ◽  
pp. L1045-L1047
Author(s):  
Chie-In Lee ◽  
Yan-Ten Lu ◽  
Yan-Kuin Su ◽  
Shoou-Jinn Chang ◽  
Jenn-Shyong Hwang ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Optical Transitions ◽  
Photoreflectance Spectroscopy ◽  
Self Assembled ◽  
Ge Quantum Dot
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