Process and device simulations aimed at improving the emitter region performance of silicon PERC solar cells

2021 ◽  
Author(s):  
Savita Kashyap ◽  
Jaya Madan ◽  
Rahul Pandey ◽  
Rajnish Sharma
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Ion Implantation ◽  
Diffusion Process ◽  
Process Parameters ◽  
Diffusion Time ◽  
Process Variables ◽  
Influence Of Process Parameters ◽  
Emitter Region ◽  
And Diffusion

Abstract Achieved levels of Silicon-based passivated emitter and rear cell (PERC) solar cells' laboratory and module-level conversion efficiencies are still far from the theoretically achievable Auger limit of 29.4% for silicon solar cells, prominently due to emitter recombination and resistive losses. The emitter region in PERC devices is formed by using either ion implantation followed by a diffusion process or POCl3 diffusion. In ion-implanted emitter-based PERC, the process variables such as dose, energy, diffusion time, and temperature play a vital role in defining the characteristics of the emitter region. Detailed investigation of these parameters could provide a pathway to mitigate the recombination as well as resistive losses; however, it requires a considerable budget to optimize these parameters through a purely experimental approach. Therefore, advanced industrial standard process and device simulation are perceived in this work to carry out the comprehensive study of process variables. Investigation of ion implantation and diffusion process parameters on the PV performance of an upright pyramid textured, industrial standard stacked dielectric passivated PERC solar cell is carried out to deliver 22.8% conversion efficiency with improved PV parameters such as short circuit current density (JSC) of 40.8 mA/cm2, open-circuit voltage (VOC) of 686 mV, and fill-factor (FF) of 81.54% at optimized implantation and diffusion parameters, such as implantation dose of 5×1015 cm-2 with energy 30 keV followed 950 oC diffusion temperature and 30 min of diffusion time. The performance of the optimized PERC device is compared with already published large area screen printed contact-based device. This work may open up a window for the experimental work to understand the influence of process parameters on the emitter region to develop the highly efficient PERC solar cell in the future.

Silicon Tunnel Junctions Produced by Ion Implantation and Diffusion Processes for Tandem Solar Cells

2018 ◽  
Vol 8 (6) ◽  
pp. 1436-1442
Author(s):  
Pierre Bellanger ◽  
Albert Minj ◽  
Alain Fave ◽  
Zakaria Djebbour ◽  
Stephane Roques ◽  
...  
Keyword(s):  
Solar Cells ◽  
Ion Implantation ◽  
Diffusion Processes ◽  
Tunnel Junctions ◽  
Tandem Solar Cells ◽  
And Diffusion

Relationship Between Minority Carrier Parameters and Solar Cell Characteristics of Electromagnetic Cast Polycrystalline Silicon

1993 ◽  
Vol 324 ◽  
Author(s):  
Eiichi Suzuki ◽  
Kyojiro Kaneko ◽  
Toru Nunoi
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Polycrystalline Silicon ◽  
High Efficiency ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Small Variation ◽  
Minority Carrier Lifetime ◽  
The Relationship ◽  
And Diffusion

AbstractThe relationship between minority carrier properties and solar cell characteristics of electromagnetic (EM) cast polycrystalline Si has experimentally been investigated. The minority carrier lifetime τ and diffusion coefficient D were evaluated by a novel dual mercury probe method. The solar cell characteristics, e.g., a conversion efficiency η were measured by fabricating experimental solar cells using the corresponding wafers. The wafer showing high-η (13.1%) has relatively high τ (av. 8.2 μs) with small variation of I) (av. 29.6 cm2/s). On the contrary, the low-η (11%) wafer shows low τ (av. 1.1 μs), including some inferior portions with very low τ of less than 0.5 μs. It is also shown that D drastically deteriorates with decreasing τ if τ is less than around 2 μs. To realize high efficiency polycrystalline solar cells, the wafers with high value of τ and without considerably low-τ portions are needed.

scholarly journals Highly Efficient Microcrystalline Silicon Solar Cells Deposited from a Pure SiH4 Flow

2006 ◽  
Vol 910 ◽  
Author(s):  
Menno van den Donker ◽  
B. Rech ◽  
R. Schmitz ◽  
J. Klomfass ◽  
G. Dingemans ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Process Parameters ◽  
Gas Flow ◽  
Optical Emission ◽  
Plasma Properties ◽  
Time Resolved ◽  
Plasma Ignition ◽  
Internal Parameters ◽  
External Process

AbstractThe effect of conventional process parameters on the deposition of μc-Si:H solar cells is reviewed. Then, an approach to solar cell optimization is presented in which hidden, internal parameters are adjusted rather than conventional, external process parameters. The investigation focuses on deposition at low H2 dilution ratio and low total gas flow. A hidden parameter is identified through time resolved optical emission spectroscopy on SiH emission: Transient depletion of the SiH4 source gas leads to uncontrolled deposition conditions during the first 90 s after plasma ignition. There hardly is any effect on plasma properties and deposited film properties for the remainder of deposition after the transient depletion phase. As demonstrator a 9.5 % efficient single junction μc-Si:H solar cell was deposited from a pure SiH4 flow. A reinterpretation of the role of H2 dilution is discussed.

scholarly journals p-Type Quasi-Mono Silicon Solar Cell Fabricated by Ion Implantation

2013 ◽  
Vol 2013 ◽  
pp. 1-8 ◽  
Author(s):  
Chien-Ming Lee ◽  
Sheng-Po Chang ◽  
Shoou-Jinn Chang ◽  
Ching-In Wu
Keyword(s):  
Solar Cell ◽  
Ion Implantation ◽  
Diffusion Process ◽  
Silicon Wafer ◽  
Industrial Process ◽  
Average Cell ◽  
Promising Alternative ◽  
Cell Efficiency ◽  
Implantation Process ◽  
P Type

The p-type quasi-mono wafer is a novel type of silicon material that is processed using a seed directional solidification technique. This material is a promising alternative to traditional high-cost Czochralski (CZ) and float-zone (FZ) material. Here, we evaluate the application of an advanced solar cell process featuring a novel method of ion implantation on p-type quasi-mono silicon wafer. The ion implantation process has simplified the normal industrial process flow by eliminating two process steps: the removal of phosphosilicate glass (PSG) and the junction isolation process that is required after the conventional thermal POCl3diffusion process. Moreover, the good passivation performance of the ion implantation process improvesVoc. Our results show that, after metallization and cofiring, an average cell efficiency of 18.55% can be achieved using 156 × 156 mm p-type quasi-mono silicon wafer. Furthermore, the absolute cell efficiency obtained using this method is 0.47% higher than that for the traditional POCl3diffusion process.

On the Mechanism of Hydrogen Diffusion in Si Solar Cells Using PECVD SiN:H

2004 ◽  
Vol 813 ◽  
Author(s):  
B.L. Sopori ◽  
Y. Zhang ◽  
R. Reedy ◽  
K. M. Jones ◽  
Y. Yan ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Silicon Solar Cell ◽  
Hydrogen Diffusion ◽  
Surface Damage ◽  
Experimental Results ◽  
Metal Contact ◽  
Si Solar Cells ◽  
Transport And Diffusion ◽  
And Diffusion

ABSTRACTA mechanism for transport and diffusion of H in a silicon solar cell by PECVD SiN:H process is proposed. Plasma-induced surface damage “stores” H during the nitride deposition, which is driven into the bulk of the solar cell during metal-contact firing. Theoretical and experimental results are given that verify this mechanism.

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