Impact of active layer thickness of nitrogen-doped In–Sn–Zn–O films on materials and thin film transistor performances

2018 ◽  
Vol 51 (17) ◽  
pp. 175101 ◽  
Author(s):  
Zhi-Yue Li ◽  
Hao-Zhi Yang ◽  
Sheng-Chi Chen ◽  
Ying-Bo Lu ◽  
Yan-Qing Xin ◽  
...  
Keyword(s):  
Thin Film ◽  
Layer Thickness ◽  
Active Layer ◽  
Thin Film Transistor ◽  
Active Layer Thickness ◽  
Nitrogen Doped

Effect of Active Layer Thickness on Device Performance of Tungsten-Doped InZnO Thin-Film Transistor

2017 ◽  
Vol 64 (1) ◽  
pp. 159-163 ◽  
Author(s):  
Hyun-Woo Park ◽  
Kyung Park ◽  
Jang-Yeon Kwon ◽  
Dukhyun Choi ◽  
Kwun-Bum Chung
Keyword(s):  
Thin Film ◽  
Layer Thickness ◽  
Active Layer ◽  
Thin Film Transistor ◽  
Active Layer Thickness ◽  
Device Performance

Effect of active layer thickness on environmental stability of printed thin-film transistor

2009 ◽  
Vol 10 (3) ◽  
pp. 421-425 ◽  
Author(s):  
Min Hee Choi ◽  
Seung Hoon Han ◽  
Sun Hee Lee ◽  
Dong Joon Choo ◽  
Jin Jang ◽  
...  
Keyword(s):  
Thin Film ◽  
Layer Thickness ◽  
Active Layer ◽  
Thin Film Transistor ◽  
Environmental Stability ◽  
Active Layer Thickness

Active-layer Thickness Effects Related to the Threshold Voltage and Mobility Degradation in Poly-crystalline ZnO Thin-Film Transistors

2011 ◽  
Vol 58 (5(1)) ◽  
pp. 1307-1311 ◽  
Author(s):  
Kwang-Seok Jeong ◽  
Yu-Mi Kim ◽  
Jeong-Gyu Park ◽  
Seung-Dong Yang ◽  
Ho-Jin Yun ◽  
...  
Keyword(s):  
Thin Film ◽  
Layer Thickness ◽  
Active Layer ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Active Layer Thickness ◽  
Zno Thin Film ◽  
Mobility Degradation

The impact of active layer thickness on low-frequency noise characteristics in InZnO thin-film transistors with high mobility

2012 ◽  
Vol 100 (17) ◽  
pp. 173501 ◽  
Author(s):  
Hyun-Sik Choi ◽  
Sanghun Jeon ◽  
Hojung Kim ◽  
Jaikwang Shin ◽  
Changjung Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Layer Thickness ◽  
Active Layer ◽  
Thin Film Transistors ◽  
Low Frequency ◽  
High Mobility ◽  
Active Layer Thickness ◽  
Frequency Noise ◽  
Noise Characteristics ◽  
The Impact

scholarly journals TCO and back contact buffer significance to achieve highest open circuit voltage and efficiency of CdTe solar cells

2021 ◽  
Author(s):  
Bablu K. Ghosh ◽  
Ismail Saad ◽  
Khairul A Mahmood
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Layer Thickness ◽  
Active Layer ◽  
Open Circuit Voltage ◽  
Open Circuit ◽  
Electrical Performance ◽  
Active Layer Thickness ◽  
Back Contact ◽  
Interface Layers

Abstract CdTe thin film (TF) solar cells are most promising in commercial stage photovoltaic (PV) technologies. Cell contacts and interface defects related opto-electrical losses are still vital to limit its further technological benefit. Thin film PV cells voltage and fill factor loss lessening purpose carrier selective back contact selection with band matching interface layers are essential. Beside that buffer and active layer thickness selection is vital for field assisted selective carrier collection. The suitable emitter or buffer layer thickness and band gap matching to the active layer is potential to lessen parasitic absorption and shallow recombination loss. In this purpose SCAPS software based ZnO and SnO2 TCO as well as CdS and CdSe buffer impact are numerically analyzed. The TCO, emitter, back surface field layer and metal contacts effects on electrical performance is studied. In the model, TCO and back contact barrier thickness is shown significant to progress electrical performance. Eventually, open circuit voltage Voc = 0.9757 V and 19.92% efficiency is achieved for 90 nm of ZnTe BSF with ZnO TCO and CdS emitter layer of optimized thickness.

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