Chemical trends of cation-vacancy-induced d0 ferromagnetism in dilute zinc chalcogenides

2021 ◽  
Author(s):  
Yang Yang ◽  
Peng Zhang ◽  
Su-Huai Wei
Keyword(s):  
Cation Vacancy ◽  
Chemical Trends ◽  
D0 Ferromagnetism

Multifunctional cation-vacancy-rich ZnCo2O4 polysulfide-blocking layer for ultrahigh-loading Li-S battery

Nano Energy ◽  
2021 ◽  
pp. 106331
Author(s):  
Zhenwei Li ◽  
Qian Zhang ◽  
Luke Hencz ◽  
Jie Liu ◽  
Payam Kaghazchi ◽  
...  
Keyword(s):  
Cation Vacancy ◽  
Blocking Layer

Ferromagnetism driven by cation vacancy in GaN thin films and nanowires

2010 ◽  
Vol 256 (20) ◽  
pp. 6040-6046 ◽  
Author(s):  
Anlong Kuang ◽  
Hongkuan Yuan ◽  
Hong Chen
Keyword(s):  
Thin Films ◽  
Cation Vacancy

A unified understanding of the direct coordination of NO to first-transition-row metal centers in metal–ligand complexes

2017 ◽  
Vol 19 (41) ◽  
pp. 28098-28104 ◽  
Author(s):  
Hyunjoo Lee ◽  
Joongoo Kang
Keyword(s):  
Comparative Study ◽  
First Principles ◽  
Metal Centers ◽  
Chemical Trends ◽  
Binding Mechanisms ◽  
Metal Ligand

Our first-principles comparative study provides insights into understanding the binding mechanisms of NO to metal–ligand complexes and related chemical trends.

Effect of vacuum-annealing on the d0 ferromagnetism of undoped In2O3 films

2012 ◽  
Vol 324 (18) ◽  
pp. 2932-2935 ◽  
Author(s):  
Shaohua Sun ◽  
Ping Wu ◽  
Pengfei Xing
Keyword(s):  
Vacuum Annealing ◽  
D0 Ferromagnetism

Cation vacancy and magnetic properties of ZnFe2O4 microspheres

2020 ◽  
Vol 583 ◽  
pp. 412015 ◽  
Author(s):  
K. Sarkar ◽  
R. Mondal ◽  
S. Dey ◽  
S. Kumar
Keyword(s):  
Magnetic Properties ◽  
Cation Vacancy

Features of Electrical and Photoelectric Properties of GaS(Yb) Monocrystals

2019 ◽  
Vol 74 (9) ◽  
pp. 821-825
Author(s):  
Madatov Rahim ◽  
Najafov Arzu ◽  
Alakbarov Aydin ◽  
Tagiev Teymur ◽  
Khaliqzadeh Aydan
Keyword(s):  
Temperature Dependence ◽  
Thermal Activation ◽  
Cation Vacancy ◽  
Specific Resistance ◽  
Structure Defects ◽  
Photoelectric Properties ◽  
Donor Type ◽  
Partial Compensation

AbstractThe electrical and photoelectric properties of GaS(Yb) monocrystal have been studied in the range of 100–300 K. It has been established that as the partial compensation of structure defects (VGa) occurs due to the inclusion of ytterbium dopant, the electroconductivity of GaS monocrystal decreases. The simultaneously occurrence of substitution (YbGa) of cation vacancy – VYb and Yb-Ga due to the formation of acceptor and donor type two charged local centers during the doping, leads to a self-compensating process. As a result, the specific resistance of the crystal increases, and thermal activation and extinction processes are observed in the temperature dependence of photoconductivity.

Cation Vacancy-Initiated CO2 Photoreduction over ZnS for Efficient Formate Production

2019 ◽  
Vol 4 (6) ◽  
pp. 1387-1393 ◽  
Author(s):  
Hong Pang ◽  
Xianguang Meng ◽  
Peng Li ◽  
Kun Chang ◽  
Wei Zhou ◽  
...  
Keyword(s):  
Cation Vacancy ◽  
Co2 Photoreduction ◽  
Formate Production
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