Features of Electrical and Photoelectric Properties of GaS(Yb) Monocrystals

2019 ◽  
Vol 74 (9) ◽  
pp. 821-825
Author(s):  
Madatov Rahim ◽  
Najafov Arzu ◽  
Alakbarov Aydin ◽  
Tagiev Teymur ◽  
Khaliqzadeh Aydan
Keyword(s):  
Temperature Dependence ◽  
Thermal Activation ◽  
Cation Vacancy ◽  
Specific Resistance ◽  
Structure Defects ◽  
Photoelectric Properties ◽  
Donor Type ◽  
Partial Compensation

AbstractThe electrical and photoelectric properties of GaS(Yb) monocrystal have been studied in the range of 100–300 K. It has been established that as the partial compensation of structure defects (VGa) occurs due to the inclusion of ytterbium dopant, the electroconductivity of GaS monocrystal decreases. The simultaneously occurrence of substitution (YbGa) of cation vacancy – VYb and Yb-Ga due to the formation of acceptor and donor type two charged local centers during the doping, leads to a self-compensating process. As a result, the specific resistance of the crystal increases, and thermal activation and extinction processes are observed in the temperature dependence of photoconductivity.

PHOTOELECTRIC PROPERTIES OF MnIn2S4 SINGLE CRYSTALS

2021 ◽  
Vol 88 (6) ◽  
pp. 967-969
Author(s):  
N. N. Niftiyev
Keyword(s):  
Activation Energy ◽  
Temperature Dependence ◽  
Single Crystals ◽  
Spectral Distribution ◽  
Photoconductivity Spectrum ◽  
Intracenter Transition ◽  
Photoelectric Properties ◽  
Impurity Photoconductivity ◽  
Donor Defect

The spectral distribution of the photoconductivity and the temperature dependence of the photocurrent of MnIn2S4 single crystals are investigated. The intrinsic, impurity photoconductivity and a maximum at an energy of 2.69 eV, which is associated with the intracenter transition of Mn2+ ions (6A1→4A1), are revealed in the photoconductivity spectrum. The region of the wavelengths of 600–1000 nm appears with an excess of manganese in the crystals and is caused by a donor defect. At temperatures of 80—145 K, the increase in the photocurrent is associated with the thermal depletion of the adhesion levels. The activation energy of the adhesion levels is determined.

Variable Range Hopping Resistivity in La2-xSrxCuO4 Nanoparticles Evaluated by Four Point Probe Method

2020 ◽  
Vol 860 ◽  
pp. 142-147
Author(s):  
Suci Winarsih ◽  
Faisal Budiman ◽  
Hirofumi Tanaka ◽  
Tadashi Adachi ◽  
Takayuki Goto ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Thermal Activation ◽  
Resistivity Measurement ◽  
Probe Method ◽  
Charge Carriers ◽  
High Resistivity ◽  
Variable Range Hopping ◽  
Variable Range ◽  
Hopping Model ◽  
Variable Range Hopping Model

We report the results of the resistivity measurement on La2-xSrxCuO4 nanoparticles with x = 0, 0.05, and 0.20 evaluated by the four-point probe method. The high resistivity value shows the predominance of the inter-grain part. The temperature dependence of the conductivity can be analyzed by variable range hopping model showing the charge carriers are formed by thermal activation. There is no superconducting behavior that could be observed in La2-xSrxCuO4 nanoparticles with x = 0.05 and 0.20.

scholarly journals Proton Solubility in Undoped and Fe-doped SrTiO3: Temperature Dependence and Formation of Defect Associates

1987 ◽  
Vol 42 (11) ◽  
pp. 1357-1365 ◽  
Author(s):  
Rainer Waser
Keyword(s):  
Ir Spectroscopy ◽  
Temperature Dependence ◽  
Single Crystals ◽  
Frequency Characteristic ◽  
Absorption Frequency ◽  
Dissolution Reaction ◽  
Donor Type ◽  
Stretching Vibration ◽  
Perovskite Lattice ◽  
Proton Defects

The temperature dependence of the solubility of proton defects in SrTiO3 single crystals was investigated by IR spectroscopy. Based on the integrated absorption of the OH stretching vibration bands, the enthalpies of the dissolution reaction were determined for undoped and Fe-doped SrTiO3. In contrast to undoped SrTiO3, which shows only one unique OH absorption frequency, characteristic sidebands were observed for Fe-doped crystals. These sidebands were attributed to the formation of associates between donor-type proton defects and Fe-acceptors in the perovskite lattice. From the temperature dependence of the sideband absorptions, an association enthalpy was estimated. The proton solubility and the sidebands were not affected by changing the oxygen partial pressure between approx. 10-15 and 105 Pa.

scholarly journals Temperature dependence of the indentation size effect

2010 ◽  
Vol 25 (7) ◽  
pp. 1225-1229 ◽  
Author(s):  
Oliver Franke ◽  
Jonathan C. Trenkle ◽  
Christopher A. Schuh
Keyword(s):  
High Temperature ◽  
Size Effect ◽  
Temperature Dependence ◽  
Thermal Activation ◽  
Indentation Size Effect ◽  
Inert Atmosphere ◽  
Length Scale ◽  
Indentation Size ◽  
Influence Of Temperature ◽  
Influence Of Temperature On

The influence of temperature on the indentation size effect is explored experimentally. Copper is indented on a custom-built high-temperature nanoindenter at temperatures between ambient and 200 °C, in an inert atmosphere that precludes oxidation. Over this range of temperatures, the size effect is reduced considerably, suggesting that thermal activation plays a major role in determining the length scale for plasticity.

Temperature Dependence of Electric Conductivities in Femtosecond Laser Modified Areas in Silicon Carbide

2014 ◽  
Vol 778-780 ◽  
pp. 661-664 ◽  
Author(s):  
Manato Deki ◽  
Tomoki Oka ◽  
Shodai Takayoshi ◽  
Yoshiki Naoi ◽  
Takahiro Makino ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Femtosecond Laser ◽  
Temperature Dependence ◽  
Specific Resistance ◽  
Laser Modification ◽  
Current Voltage ◽  
Double Exponential ◽  
Current Voltage Characteristics ◽  
Exponential Fit

Temperature dependence of the femtosecond laser modified region on silicon carbide was measured. The current-voltage characteristics showed the ohmic properties and thus we could evaluate the specific resistance for each irradiation conditions and the measured temperatures. The specific resistance was increased with decreasing temperature. From the double exponential fit to the temperature dependence of the specific resistance, the trapping energy of the impurity levels formed by the femtosecond laser modification was found to be 4.5 meV and 51.4 meV.

A Model-Inspired Phenomenology Constitutive Equation for the Temperature-Dependence of Flow Stress at Confined Dimension I

2014 ◽  
Vol 534 ◽  
pp. 83-92 ◽  
Author(s):  
Rahmat Saptono ◽  
Choong Un Kim
Keyword(s):  
Flow Stress ◽  
Constitutive Equation ◽  
Temperature Dependence ◽  
First Principles ◽  
Short Range ◽  
Thermal Activation ◽  
Temperature Dependent ◽  
Dependent Behavior ◽  
Correlation Factors ◽  
Temperature Dependent Behavior

A model-inspired phenomenology constitutive equation was developed from the first principles to study the temperature dependence of flow stress at confined dimension. The model was limited in the range of temperature and strain-rate where diffusion is insignificant. It was assumed that flow stress was predominantly governed by the thermal activation of dislocation lines overcoming short-range barriers. A simple sound model was developed from the established principles. Data from relevant experiments were fitted into the model to evaluate and reveal key parameters. Normalization of the data and linearization of the model were performed prior to the evaluation and analysis. The proposed models were generally well fitted to the experimental data as indicated by the correlation factors of >0.85, which could be principally accepted by the criteria of R2=0.90. Of the candidate models, Model III and Model I are particularly recommended to study the temperature-dependent behavior of Cu at confined dimension in the space of interest related to the intended applications (2<TM/T<5). Physical mechanistic re-interpretation of the models for the problem of interest is presented in the second report (Part II).

Temperature dependence of the specific resistance in Ti∕Al∕Ni∕Au contacts on n-type GaN

2006 ◽  
Vol 100 (12) ◽  
pp. 123706 ◽  
Author(s):  
F. Iucolano ◽  
F. Roccaforte ◽  
A. Alberti ◽  
C. Bongiorno ◽  
S. Di Franco ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Specific Resistance

Sr(Ti,Fe)O3: Materials for a Temperature Independent Resistive Oxygen Sensor

1999 ◽  
Vol 604 ◽  
Author(s):  
W. Menesklou ◽  
H.-J. Schreiner ◽  
R. Moos ◽  
K.H. Härdtl ◽  
E. Ivers-Tiffée
Keyword(s):  
Temperature Dependence ◽  
Thermal Activation ◽  
Pressure Range ◽  
Oxygen Sensor ◽  
Response Times ◽  
Oxygen Sensors ◽  
Strong Temperature Dependence ◽  
Combustion Engines ◽  
Temperature Dependence Of Conductivity ◽  
Distinct Temperature

AbstractThe metal oxide strontium titanate is a promising material for resistive high temperature oxygen sensors (T > 1000 K), that can be applied to control combustion engines. However, a disadvantage of this and of many other metal oxides is the strong temperature dependence of conductivity. In this work, we show that the temperature dependence of Sr(Ti1-x, Fex)O3-δ can be adjusted by the iron content. For x = 0.35 the thermal activation of the conductivity is near zero for a distinct temperature and oxygen partial pressure range (T = 1000 K - 1200 K, PO2 = 10 to 105 Pa). Short response times in the range of 10 ms can be realized by using sensors in thick film technology

Sign in / Sign up

Export Citation Format

Share Document