Study on Li ion diffusion in LixV2O5 using first principle calculations and kinetic Monte Carlo simulations

Author(s):  
Fabian Dietrich ◽  
Eduardo Cisternas ◽  
Pedro Marcelo Pasinetti ◽  
Gonzalo Joaquín Dos Santos

Abstract We study the Li diffusion in LixV2O5 (0 < x < 1) - a potential cathode material for Lithium ion batteries. Different diffusion pathways in this material in dependence on the Li ion concentration are investigated by applying first-principles calculations. The results are used to obtain the corresponding diffusion coefficients by employing two complementary methodologies: Kinetic Monte Carlo (KMC) simulations and a statistical thermodynamics approach. The KMC simulations for two different crystal planes give new evidence that the diffusion occurs mainly along the [010] direction, while the corresponding diffusion coefficients show a temperature dependence obeying the Arrhenius' Law. The necessity of the consideration of concentration-dependent barrier heights in the KMC simulations are demonstrated by looking at the significant changes of the concentration-dependence of the diffusion cofficients. The simulated diffusion coefficients of the combined approach show a good quantitative agreement with experimental data reported previously.

2021 ◽  
Author(s):  
Edgardo Maximiliano Gavilán-Arriazu ◽  
Michael Mercer ◽  
Daniel E Barraco ◽  
Harry Hoster ◽  
Ezequiel Leiva

2012 ◽  
Vol 326-328 ◽  
pp. 99-104
Author(s):  
Alexander Tarasenko ◽  
Lubomir Jastrabik

The diffusion of guest molecules in zeolites is investigated in the framework of a onedimensionallattice-gas model with two non-equivalent sites. The concentration dependenciesof the tracer and center-of-mass diffusion coefficients are calculated for some representative valuesof the lateral interaction between the guest molecules. Using simple ideas about moleculesdiffusion we propose analytical expressions for the diffusion coefficients. We compare the theoreticaldependencies with the numerical data obtained by the kinetic Monte Carlo simulations.A very good coincidence of the data obtained by the two quite independent different methodscorroborates strongly the validity of the proposed approach.


2013 ◽  
Vol 740-742 ◽  
pp. 393-396
Author(s):  
Maxim N. Lubov ◽  
Jörg Pezoldt ◽  
Yuri V. Trushin

The influence of attractive and repulsive impurities on the nucleation process of the SiC clusters on Si(100) surface was investigated. Kinetic Monte Carlo simulations of the SiC clusters growth show that that increase of the impurity concentration (both attractive and repulsive) leads to decrease of the mean cluster size and rise of the nucleation density of the clusters.


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