Fabrication and field emission properties of vertical, tapered GaN nanowires etched via phosphoric acid
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2014 ◽
Vol 83
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pp. 277-281
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2007 ◽
Vol 154
(10)
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pp. K87
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2005 ◽
Vol 109
(36)
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pp. 17082-17085
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2014 ◽
Vol 56
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pp. 80-85
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2016 ◽
Vol 681
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pp. 324-329
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