Direct parameter extraction method for InP heterojunction bipolar transistors based on the combination of T- and π-models up to 110 GHz
1992 ◽
Vol 2
(12)
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pp. 502-504
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2012 ◽
Vol 52
(12)
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pp. 2941-2947
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1997 ◽
Vol 45
(1)
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pp. 39-45
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1996 ◽