scholarly journals Imaging of dynamic magnetic fields with spin-polarized neutron beams

2015 ◽  
Vol 17 (4) ◽  
pp. 043047 ◽  
Author(s):  
A S Tremsin ◽  
N Kardjilov ◽  
M Strobl ◽  
I Manke ◽  
M Dawson ◽  
...  
Keyword(s):  
Magnetic Fields ◽  
Neutron Beams ◽  
Spin Polarized ◽  
Polarized Neutron

Transmission optical device to produce intense polarized neutron beams

1988 ◽  
Vol 53 (8) ◽  
pp. 648-650 ◽  
Author(s):  
H. A. Mook ◽  
John B. Hayter
Keyword(s):  
Optical Device ◽  
Neutron Beams ◽  
Polarized Neutron

Using spin-polarized neutron reflectivity to probe mesoscopic vortex states in a Pb thin-film superconductor

2009 ◽  
Vol 80 (13) ◽  
Author(s):  
A. J. Drew ◽  
M. W. Wisemayer ◽  
D. O. G. Heron ◽  
S. Lister ◽  
S. L. Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Neutron Reflectivity ◽  
Vortex States ◽  
Spin Polarized ◽  
Polarized Neutron

scholarly journals Visualization and quantification of inhomogeneous and anisotropic magnetic fields by polarized neutron grating interferometry

2019 ◽  
Vol 10 (1) ◽  
Author(s):  
Jacopo Valsecchi ◽  
Ralph P. Harti ◽  
Marc Raventós ◽  
Muriel D. Siegwart ◽  
Manuel Morgano ◽  
...  
Keyword(s):  
Magnetic Fields ◽  
Polarized Neutron

Spin-Polarized Neutron Reflection Measurements on Atomically Thin Magnetic Layers

1987 ◽  
Vol 35 (4) ◽  
pp. 528-531 ◽  
Author(s):  
J A C Bland ◽  
D Pescia ◽  
R F Willis ◽  
O Schaërpf
Keyword(s):  
Neutron Reflection ◽  
Magnetic Layers ◽  
Spin Polarized ◽  
Polarized Neutron

Magnetotransport Properties in a Lateral Spin-Injection Device with a Ferromagnetic/Si/ Ferromagnetic Junction

2004 ◽  
Vol 449-452 ◽  
pp. 1081-1084
Author(s):  
Woong Joon Hwang ◽  
H.J. Lee ◽  
K.I. Lee ◽  
J.M. Lee ◽  
J.Y. Chang ◽  
...  
Keyword(s):  
Magnetic Fields ◽  
Spin Transport ◽  
Spin Injection ◽  
The Other ◽  
Injection Device ◽  
Polarized Electrons ◽  
Spin Polarized ◽  
First Contact

The spin transport in a lateral spin-injection device with an FeCo/Si/FeCo junction has been investigated. Magnetoresistance (MR) signals were found to appear at low magnetic fields in the range 4 – 300 K. This is attributable to the switching of the magnetization of the two ferromagnetic contacts in the device for certain magnetic fields over which the magnetization in one contact is aligned antiparallel to that in the other. Our results suggest that the spin-polarized electrons are injected from the first contact and, after propagating through the bulk Si, are collected by the second contact.

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