Magnetotransport Properties in a Lateral Spin-Injection Device with a Ferromagnetic/Si/ Ferromagnetic Junction

2004 ◽  
Vol 449-452 ◽  
pp. 1081-1084
Author(s):  
Woong Joon Hwang ◽  
H.J. Lee ◽  
K.I. Lee ◽  
J.M. Lee ◽  
J.Y. Chang ◽  
...  
Keyword(s):  
Magnetic Fields ◽  
Spin Transport ◽  
Spin Injection ◽  
The Other ◽  
Injection Device ◽  
Polarized Electrons ◽  
Spin Polarized ◽  
First Contact

The spin transport in a lateral spin-injection device with an FeCo/Si/FeCo junction has been investigated. Magnetoresistance (MR) signals were found to appear at low magnetic fields in the range 4 – 300 K. This is attributable to the switching of the magnetization of the two ferromagnetic contacts in the device for certain magnetic fields over which the magnetization in one contact is aligned antiparallel to that in the other. Our results suggest that the spin-polarized electrons are injected from the first contact and, after propagating through the bulk Si, are collected by the second contact.

Magnetization switching due to nonlocal spin injection

2017 ◽  
Author(s):  
T. Kimura ◽  
Y. Otani
Keyword(s):  
Electric Field ◽  
Diffusion Process ◽  
Spin Injection ◽  
The Other ◽  
Incoming Flow ◽  
Polarized Electrons ◽  
Left Hand ◽  
Right Hand ◽  
Spin Polarized ◽  
The Right

This chapter discusses and presents a schematic illustration of nonlocal spin injection. In this case, the spin-polarized electrons are injected from the ferromagnet and are extracted from the left-hand side of the nonmagnet. This results in the accumulation of nonequilibrium spins in the vicinity of the F/N junctions. Since the electrochemical potential on the left-hand side is lower than that underneath the F/N junction, the electron flows by the electric field. On the right-hand side, although there is no electric field, the diffusion process from the nonequilibrium into the equilibrium state induces the motion of the electrons. Since the excess up-spin electrons exist underneath the F/N junction, the up-spin electrons diffuse into the right-hand side. On the other hand, the deficiency of the down-spin electrons induces the incoming flow of the down-spin electrons opposite to the motion of the up-spin electron.

Spin transport in a lateral spin-injection device with an FM/Si/FM junction

2004 ◽  
Vol 272-276 ◽  
pp. 1915-1916 ◽  
Author(s):  
W.J. Hwang ◽  
H.J. Lee ◽  
K.I. Lee ◽  
Y.M. Kim ◽  
J.Y. Chang ◽  
...  
Keyword(s):  
Spin Transport ◽  
Spin Injection ◽  
Injection Device

Injection of spin polarized electrons in InAs quantum dots

2009 ◽  
Vol 1208 ◽  
Author(s):  
Andreas Russ ◽  
Mesut Yasar ◽  
Athos Petrou ◽  
George Kioseoglou ◽  
Connie Li ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Quantum Dots ◽  
Spin Injection ◽  
Emission Spectra ◽  
Exchange Interactions ◽  
Electron Spin Polarization ◽  
Polarized Electrons ◽  
Inas Quantum Dots ◽  
Spin Polarized ◽  
Spin Led

AbstractWe present the results of an electrical injection study of spin polarized electrons from ferromagnetic Fe contacts into electronic shells of self-assembled InAs quantum dots (QDs) incorporated in GaAs/AlGaAs spin LED structures. The circular polarization of the emitted light was measured as function of current and magnetic field. The polarization of the EL spectra exhibits strong maxima at energies that do not coincide with the electroluminescence (EL) intensity peaks. The magnetic field dependence of the polarization maxima is consistent with spin injection from the ferromagnetic Fe contacts. The experimental results are compared with calculated emission spectra from multi-exciton complexes (N = 2 and N = 6) as function of electron spin polarization. The energies of the EL features as well as their polarization characteristics are understood in terms of energy shifts due to exchange interactions between spin-down electrons occupying adjacent shells.

Nuclear spin polarization by out-of-plane spin injection from ferromagnet into an InAs heterostructure

2012 ◽  
Vol 1396 ◽  
Author(s):  
Tomotsugu Ishikura ◽  
Takahiro Hiraki ◽  
Takashi Matsuda ◽  
Joungeob Lee ◽  
Kanji Yoh
Keyword(s):  
Magnetic Field ◽  
Spin Polarization ◽  
Nuclear Spin ◽  
Spin Injection ◽  
Hall Voltage ◽  
Nuclear Spin Polarization ◽  
Polarized Electrons ◽  
Spin Polarized ◽  
Magnetic Metal ◽  
Out Of Plane

AbstractWe have investigated an InAs channel Hall-bar structure with ferromagnetic spin injector in one of the current terminals. After magnetizing the Fe electrode, spin polarized electrons are injected through the edge of the isolation mesa structure and the anomalous Hall voltage is observed, when electrons are injected from the ferromagnetic terminal. However, when electrons are injected from the non-magnetic metal (Ti/Au) of opposite terminal, the Hall voltage disappeared to the variation error level due to the fabrication imperfections. This result suggests the possibility that out-of-plane spin injection from the channel edge lead to perpendicular nuclear magnetic field. It is presumably caused by nuclear spin polarization in InAs channel near the spin source edge through Overhauser effect. The estimated internal magnetic field was 2000 Gauss.

ELECTRICAL INJECTION AND OPTICAL READOUT OF SPIN STATES IN A SINGLE QUANTUM DOT

2009 ◽  
Vol 23 (12n13) ◽  
pp. 2826-2835
Author(s):  
T. KÜMMELL ◽  
M. GHALI ◽  
J. HUANG ◽  
R. ARIANS ◽  
G. BACHER ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Diluted Magnetic Semiconductor ◽  
Spin Injection ◽  
Magnetic Semiconductor ◽  
Polarization Degree ◽  
Polarized Electrons ◽  
Optical Readout ◽  
Spin Polarized ◽  
Single Quantum Dot ◽  
Diluted Magnetic

We demonstrate electrically driven spin injection into a single semiconductor quantum dot. Spin polarized electrons are transferred from a diluted magnetic semiconductor ( ZnMnSe ) into InAs quantum dots embedded into GaAs barriers. The spin information can be extracted directly from the polarization degree of the electroluminescence signal stemming from an individual quantum dot. By slightly modifying the device design, we demonstrate a concept to electrically charge the quantum dot by a spin polarized electron and present a simple way to probe this spin state optically.

scholarly journals Nonmagnetic single-molecule spin-filter based on quantum interference

2019 ◽  
Vol 10 (1) ◽  
Author(s):  
Atindra Nath Pal ◽  
Dongzhe Li ◽  
Soumyajit Sarkar ◽  
Sudipto Chakrabarti ◽  
Ayelet Vilan ◽  
...  
Keyword(s):  
Magnetic Fields ◽  
Single Molecule ◽  
Quantum Interference ◽  
Spin Transport ◽  
Spin Current ◽  
Spin Transfer Torque ◽  
Spin Splitting ◽  
Spin Polarized ◽  
Noise Measurements ◽  
Low Sensitivity

AbstractKey spin transport phenomena, including magnetoresistance and spin transfer torque, cannot be activated without spin-polarized currents, in which one electron spin is dominant. At the nanoscale, the relevant length-scale for modern spintronics, spin current generation is rather limited due to unwanted contributions from poorly spin-polarized frontier states in ferromagnetic electrodes, or too short length-scales for efficient spin splitting by spin-orbit interaction and magnetic fields. Here, we show that spin-polarized currents can be generated in silver-vanadocene-silver single molecule junctions without magnetic components or magnetic fields. In some cases, the measured spin currents approach the limit of ideal ballistic spin transport. Comparison between conductance and shot-noise measurements to detailed calculations reveals a mechanism based on spin-dependent quantum interference that yields very efficient spin filtering. Our findings pave the way for nanoscale spintronics based on quantum interference, with the advantages of low sensitivity to decoherence effects and the freedom to use non-magnetic materials.

Modeling of Spin Injection and Spin Transport Properties in Organic and Inorganic Semiconductors

2005 ◽  
Vol 871 ◽  
Author(s):  
P. P. Ruden ◽  
J. D. Albrecht ◽  
D. L. Smith
Keyword(s):  
Charge Carrier ◽  
Thermal Equilibrium ◽  
Spin Transport ◽  
Spin Injection ◽  
Molecular Crystals ◽  
Carrier Injection ◽  
Inorganic Semiconductors ◽  
Organic Molecular Crystals ◽  
Spin Polarized ◽  
Charge Carrier Injection

AbstractSpin polarized charge carrier injection and transport in non-magnetic semiconductors is a key enabling mechanism for spin based electronic data processing. We present theoretical models to describe spin injection and spin transport in structures consisting of a ferromagnetic metal injector, a thin semiconductor layer, and a ferromagnetic metal collector. The semiconductors considered are conjugated polymers (e.g. PPV), small-molecule organic molecular crystals (e.g. pentacene), and inorganic semiconductors (e.g. silicon). In thermal equilibrium the charge carriers in these semiconductors are not spin polarized. Efficient spin injection requires that the semiconductor be driven far out of local thermal equilibrium. Since carrier mobilities (and other relevant parameters) in polymers, organic molecular crystals, and inorganic semiconductors differ by many orders of magnitude, their charge carrier injection characteristics differ significantly.

SURFACE AND THIN FILM MAGNETISM WITH SPIN POLARIZED ELECTRONS

1988 ◽  
Vol 49 (C8) ◽  
pp. C8-9-C8-16 ◽  
Author(s):  
H. C. Siegmann ◽  
D. Mauri ◽  
D. Scholl ◽  
E. Kay
Keyword(s):  
Thin Film ◽  
Polarized Electrons ◽  
Spin Polarized ◽  
Thin Film Magnetism
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