AbstractThe structural, electrical, and optical properties of thin graphite-like films produced by magnetron- assisted sputtering onto crystalline silicon and quartz at substrate temperatures in the range from 320 to 620°C are studied. From analysis of the Raman spectra, it is established that, as the substrate temperature is elevated, the crystallite size increases and the concentration of structural defects and the content of amorphous carbon in the phase composition of the films decrease. It is found that, as the substrate temperature is elevated, the maximum of the absorption intensity in the ultraviolet spectral region of the optical absorption spectra shifts to longer wavelengths and the absorption intensity in the visible and near-infrared spectral regions increases. As the deposition temperature is elevated, the conductivity of the films increases from 0.2 Ω^–1 cm^–1 at 320°C to 30 Ω^–1 cm^–1 at 620°C.
Photoionization of nS and nD Rydberg atoms of Rb and Cs from the near-infrared to the ultraviolet spectral region
