Flat-roof phenomenon of dynamic equilibrium phase in the negative bias temperature instability effect on a power MOSFET

Chinese Physics B ◽

10.1088/1674-1056/23/5/057304 ◽

2014 ◽

Vol 23 (5) ◽

pp. 057304

Author(s):

Yue Zhang ◽

Qing-Qing Zhuo ◽

Hong-Xia Liu ◽

Xiao-Hua Ma ◽

Yue Hao

Keyword(s):

Dynamic Equilibrium ◽

Equilibrium Phase ◽

Negative Bias ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Power Mosfet ◽

Bias Temperature Instability ◽

Instability Effect ◽

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Compact In-Situ Sensors for Monitoring Negative-Bias-Temperature-Instability Effect and Oxide Degradation

2008 IEEE International Solid-State Circuits Conference - Digest of Technical Papers ◽

10.1109/isscc.2008.4523231 ◽

2008 ◽

Author(s):

E. Karl ◽

P. Singh ◽

D. Blaauw ◽

D. Sylvester

Keyword(s):

Negative Bias ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Bias Temperature Instability ◽

Oxide Degradation ◽

Instability Effect ◽

In Situ Sensors

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Study on the negative bias temperature instability effect under dynamic stress

Chinese Physics B ◽

10.1088/1674-1056/19/11/117308 ◽

2010 ◽

Vol 19 (11) ◽

pp. 117308 ◽

Author(s):

Xiao-Hua Ma ◽

Yan-Rong Cao ◽

Yue Hao

Keyword(s):

Dynamic Stress ◽

Negative Bias ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Bias Temperature Instability ◽

Instability Effect

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Negative Bias Temperature Instability Effect on the Single Event Transient Sensitivity of a 65 nm CMOS Technology

IEEE Transactions on Nuclear Science ◽

10.1109/tns.2012.2231437 ◽

2013 ◽

Vol 60 (4) ◽

pp. 2635-2639 ◽

Author(s):

I. El Moukhtari ◽

Vincent Pouget ◽

Frederic Darracq ◽

Camille Larue ◽

Philippe Perdu ◽

...

Keyword(s):

Cmos Technology ◽

Negative Bias ◽

Single Event ◽

Negative Bias Temperature Instability ◽

Single Event Transient ◽

Temperature Instability ◽

Bias Temperature Instability ◽

Instability Effect

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Investigation of Negative Bias Temperature Instability Effect in Partially Depleted SOI pMOSFET

IEEE Access ◽

10.1109/access.2020.2997463 ◽

2020 ◽

Vol 8 ◽

pp. 99037-99046

Author(s):

Chao Peng ◽

Zhifeng Lei ◽

Rui Gao ◽

Zhangang Zhang ◽

Yiqiang Chen ◽

...

Keyword(s):

Negative Bias ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Bias Temperature Instability ◽

Instability Effect

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Unified Reaction–Diffusion Model for Accurate Prediction of Negative Bias Temperature Instability Effect

Japanese Journal of Applied Physics ◽

10.7567/jjap.51.02bc07 ◽

2012 ◽

Vol 51 (2S) ◽

pp. 02BC07 ◽

Author(s):

Chenyue Ma ◽

Hans Jürgen Mattausch ◽

Masataka Miyake ◽

Kazuya Matsuzawa ◽

Takahiro Iizuka ◽

...

Keyword(s):

Diffusion Model ◽

Reaction Diffusion ◽

Accurate Prediction ◽

Negative Bias ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Bias Temperature Instability ◽

Reaction Diffusion Model ◽

Instability Effect

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An Equivalent Circuit Model for Negative Bias Temperature Instability Effect in 65nm PMOS

10.1109/icicm54364.2021.9660347 ◽

2021 ◽

Author(s):

Jun'An Zhang ◽

Min Jiang ◽

Qing' Wei Zhang

Keyword(s):

Equivalent Circuit ◽

Equivalent Circuit Model ◽

Circuit Model ◽

Negative Bias ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Bias Temperature Instability ◽

Instability Effect

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Distribution characteristic of p-channel metal-oxide-semiconductor negative bias temperature instability effect under process variations

Acta Physica Sinica ◽

10.7498/aps.65.168502 ◽

2016 ◽

Vol 65 (16) ◽

pp. 168502

Author(s):

Tang Hua-Lian ◽

Xu Bei-Lei ◽

Zhuang Yi-Qi ◽

Zhang Li ◽

Li Cong

Keyword(s):

Metal Oxide ◽

Process Variations ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Negative Bias ◽

Distribution Characteristic ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Bias Temperature Instability ◽

Instability Effect

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Unified Reaction–Diffusion Model for Accurate Prediction of Negative Bias Temperature Instability Effect

Japanese Journal of Applied Physics ◽

10.1143/jjap.51.02bc07 ◽

2012 ◽

Vol 51 (2) ◽

pp. 02BC07 ◽

Author(s):

Chenyue Ma ◽

Hans Jürgen Mattausch ◽

Masataka Miyake ◽

Kazuya Matsuzawa ◽

Takahiro Iizuka ◽

...

Keyword(s):

Diffusion Model ◽

Reaction Diffusion ◽

Accurate Prediction ◽

Negative Bias ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Bias Temperature Instability ◽

Reaction Diffusion Model ◽

Instability Effect

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Dependence of the DC stress negative bias temperature instability effect on basic device parameters in pMOSFET

Acta Physica Sinica ◽

10.7498/aps.61.217305 ◽

2012 ◽

Vol 61 (21) ◽

pp. 217305

Author(s):

Cao Jian-Min ◽

He Wei ◽

Huang Si-Wen ◽

Zhang Xu-Lin

Keyword(s):

Negative Bias ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Bias Temperature Instability ◽

Instability Effect ◽

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Design and Multicorner Optimization of the Energy-Delay Product of CMOS Flip–Flops Under the Negative Bias Temperature Instability Effect

IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems ◽

10.1109/tcad.2012.2237227 ◽

2013 ◽

Vol 32 (6) ◽

pp. 869-881 ◽

Author(s):

H. Abrishami ◽

S. Hatami ◽

M. Pedram

Keyword(s):

Negative Bias ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Bias Temperature Instability ◽

Instability Effect ◽

Energy Delay Product

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