Inclusions in large diamond single crystals at different temperatures of synthesis

2019 ◽  
Vol 28 (2) ◽  
pp. 028103 ◽  
Author(s):  
Fei Han ◽  
Shang-Sheng Li ◽  
Xue-Fei Jia ◽  
Wei-Qin Chen ◽  
Tai-Chao Su ◽  
...  
CrystEngComm ◽  
2018 ◽  
Vol 20 (29) ◽  
pp. 4127-4132 ◽  
Author(s):  
Yong Li ◽  
Yadong Li ◽  
Ying Wang ◽  
Jie Zhang ◽  
Mousheng Song ◽  
...  

To make maximal use of the synthesis cavity and improve the production efficiency, we designed the double seed bed method to synthesize large diamond crystals under high pressure and high temperature (HPHT) conditions, and the results were both theoretically calculated and verified by experiments.


2020 ◽  
Vol 69 (23) ◽  
pp. 238101
Author(s):  
Yue You ◽  
Shang-Sheng Li ◽  
Tai-Chao Su ◽  
Mei-Hua Hu ◽  
Qiang Hu ◽  
...  

2021 ◽  
Vol 3 (4) ◽  
Author(s):  
Yogesh Kumar ◽  
Rabia Sultana ◽  
Prince Sharma ◽  
V. P. S. Awana

AbstractWe report the magneto-conductivity analysis of Bi2Se3 single crystal at different temperatures in a magnetic field range of ± 14 T. The single crystals are grown by the self-flux method and characterized through X-ray diffraction, Scanning Electron Microscopy, and Raman Spectroscopy. The single crystals show magnetoresistance (MR%) of around 380% at a magnetic field of 14 T and a temperature of 5 K. The Hikami–Larkin–Nagaoka (HLN) equation has been used to fit the magneto-conductivity (MC) data. However, the HLN fitted curve deviates at higher magnetic fields above 1 T, suggesting that the role of surface-driven conductivity suppresses with an increasing magnetic field. This article proposes a speculative model comprising of surface-driven HLN and added quantum diffusive and bulk carriers-driven classical terms. The model successfully explains the MC of the Bi2Se3 single crystal at various temperatures (5–200 K) and applied magnetic fields (up to 14 T).


2000 ◽  
Vol 293 (1-2) ◽  
pp. 107-111 ◽  
Author(s):  
Long-Wei Yin ◽  
Zeng-Da Zou ◽  
Mu-Sen Li ◽  
Yu-Xian Liu ◽  
Jian-Jun Cui ◽  
...  

2010 ◽  
Vol 30 (7) ◽  
pp. 2053-2059 ◽  
Author(s):  
高鑫 Gao Xin ◽  
何元金 He Yuanjin

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