Microstructure evolution and passivation quality of hydrogenated amorphous silicon oxide (a-SiOx:H) on 〈100〉- and 〈111〉-orientated c-Si wafers

2020 ◽  
Vol 29 (3) ◽  
pp. 038801
Author(s):  
Jun-Fan Chen ◽  
Sheng-Sheng Zhao ◽  
Ling-Ling Yan ◽  
Hui-Zhi Ren ◽  
Can Han ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Microstructure Evolution ◽  
Silicon Oxide ◽  
Hydrogenated Amorphous Silicon ◽  
Amorphous Silicon Oxide ◽  
Hydrogenated Amorphous

scholarly journals Photoluminescent Properties of Hydrogenated Amorphous Silicon Oxide Powders

2002 ◽  
Vol 17 (5) ◽  
pp. 977-980 ◽  
Author(s):  
Wei-Fang Su ◽  
Hong-Ru Guo
Keyword(s):  
Amorphous Silicon ◽  
Silicon Oxide ◽  
Hydrogenated Amorphous Silicon ◽  
Thermal Quenching ◽  
Amorphous Semiconductors ◽  
Electronic Density ◽  
Quenching Effect ◽  
Oxide Powders ◽  
Amorphous Silicon Oxide ◽  
Hydrogenated Amorphous

The photoluminescence properties of hydrogenated amorphous silicon oxide powder SiO0.92H0.53 were investigated. The powder was prepared by reacting lithium with trichlorosilane in tetrahydrofuran. The luminescence peak energy was located between 1.0 and 1.61 eV. The samples were treated under different conditions such as annealing, hydrolysis, and hydrolysis plus HF etching. The changes of the photoluminescent intensity and location on the treated powders can be explained by the electronic density of state model of amorphous semiconductors. The temperature dependence of luminescence properties of the powders can be described by the relationship of thermal quenching effect: ln[Io/I(T) – 1] = ED/Eo = T/To at temperatures between 100 and 300 K.

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