Analytical models for the base transit time of a bipolar transistor with double base epilayers

2009 ◽  
Vol 30 (9) ◽  
pp. 094003 ◽  
Author(s):  
Zhang Qian ◽  
Zhang Yuming ◽  
Zhang Yimen
Keyword(s):  
Transit Time ◽  
Bipolar Transistor ◽  
Analytical Models ◽  
Double Base

Base transit time of a Heterojunction Bipolar Transistor with Gaussian doped base

2010 ◽  
Author(s):  
S. M. Moududul Islam ◽  
Yeasir Arafat ◽  
Iqbal Bahar Chowdhury ◽  
M. Ziaur Rahman Khan ◽  
M. M. Shahidul Hassan
Keyword(s):  
Transit Time ◽  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor

Distribution of base dopant for transit time minimization in a bipolar transistor

1996 ◽  
Vol 43 (1) ◽  
pp. 170-172 ◽  
Author(s):  
S.S. Winterton ◽  
S. Searles ◽  
C.J. Peters ◽  
N.G. Tarr ◽  
D.L. Pulfrey
Keyword(s):  
Transit Time ◽  
Bipolar Transistor ◽  
Time Minimization

Analytical model for base transit time of a bipolar transistor with Gaussian-doped base

2006 ◽  
Vol 50 (3) ◽  
pp. 327-332 ◽  
Author(s):  
M.M. Shahidul Hassan ◽  
Touhidur Rahman ◽  
Md. Ziaur Rahman Khan
Keyword(s):  
Analytical Model ◽  
Transit Time ◽  
Bipolar Transistor

A novel double-base heterojunction bipolar transistor for low-temperature bipolar logic

1992 ◽  
Vol 39 (11) ◽  
pp. 2636-2637 ◽  
Author(s):  
E.J. Prinz ◽  
X. Xiao ◽  
P.V. Schwartz ◽  
J.C. Sturm
Keyword(s):  
Low Temperature ◽  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
Double Base
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