Base transit time of a Heterojunction Bipolar Transistor with Gaussian doped base

International Conference on Electrical & Computer Engineering (ICECE 2010) ◽

10.1109/icelce.2010.5700643 ◽

2010 ◽

Cited By ~ 3

Author(s):

S. M. Moududul Islam ◽

Yeasir Arafat ◽

Iqbal Bahar Chowdhury ◽

M. Ziaur Rahman Khan ◽

M. M. Shahidul Hassan

Keyword(s):

Transit Time ◽

Bipolar Transistor ◽

Heterojunction Bipolar Transistor

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Numerical simulation of Silicon-Germanium Heterojunction Bipolar Transistor (HBT) in silvaco/atlas and analysis of HBT base transit time to achieve faster operation

2015 International Conference on Electrical Engineering and Information Communication Technology (ICEEICT) ◽

10.1109/iceeict.2015.7307345 ◽

2015 ◽

Author(s):

Upoma Saha ◽

Fahmi Imteaz ◽

Oishi Prova Saleque ◽

Md. Mehedi Hassan Shohag ◽

Bishwajit Debnath

Keyword(s):

Numerical Simulation ◽

Transit Time ◽

Silicon Germanium ◽

Bipolar Transistor ◽

Heterojunction Bipolar Transistor ◽

Silvaco Atlas

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Analytical modeling of base transit time for a Si1−yGey heterojunction bipolar transistor

2009 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC) ◽

10.1109/edssc.2009.5394245 ◽

2009 ◽

Author(s):

Y. Arafat ◽

M.Z.R. Khan ◽

M.M.S. Hassan

Keyword(s):

Transit Time ◽

Analytical Modeling ◽

Bipolar Transistor ◽

Heterojunction Bipolar Transistor

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Analytical modelling of base transit time and early voltage of InP/InGaAs Heterojunction Bipolar Transistor for nonuniform base doping profile

IEEE Technology Students' Symposium ◽

10.1109/techsym.2011.5783823 ◽

2011 ◽

Author(s):

S Chowdhury ◽

S Basu

Keyword(s):

Transit Time ◽

Bipolar Transistor ◽

Heterojunction Bipolar Transistor ◽

Analytical Modelling ◽

Doping Profile ◽

Base Doping

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Spatial analysis of the electron transit time in a silicon/germanium heterojunction bipolar transistor by drift-diffusion, hydrodynamic, and full-band Monte Carlo device simulation

2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502) ◽

10.1109/sispad.2000.871202 ◽

2002 ◽

Cited By ~ 1

Author(s):

C. Jungemann ◽

B. Neinhus ◽

B. Meinerzhagen

Keyword(s):

Monte Carlo ◽

Spatial Analysis ◽

Transit Time ◽

Silicon Germanium ◽

Device Simulation ◽

Bipolar Transistor ◽

Heterojunction Bipolar Transistor ◽

Drift Diffusion ◽

Full Band ◽

Monte Carlo Device Simulation

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Base transit time of a heterojunction bipolar transistor (HBT) with Gaussian doped base under high-level of injection

2012 International Conference on Devices, Circuits and Systems (ICDCS) ◽

10.1109/icdcsyst.2012.6188685 ◽

2012 ◽

Cited By ~ 3

Author(s):

S. M. Moududul Islam ◽

M. I. B. Chowdhury ◽

Y. Arafat ◽

M. Z. R. Khan

Keyword(s):

Transit Time ◽

Bipolar Transistor ◽

Heterojunction Bipolar Transistor ◽

High Level

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MICROWAVE POWER GaAs/AlGaAs HETEROJUNCTION BIPOLAR TRANSISTOR MODELLING

Le Journal de Physique Colloques ◽

10.1051/jphyscol:19884122 ◽

1988 ◽

Vol 49 (C4) ◽

pp. C4-579-C4-582

Author(s):

J. G. METCALFE ◽

R. C. HAYES ◽

A. J. HOLDEN ◽

A. P. LONG

Keyword(s):

Microwave Power ◽

Bipolar Transistor ◽

Heterojunction Bipolar Transistor

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10 Gbit/s AlGaAs/GaAs heterojunction bipolar transistor decision circuit IC

Electronics Letters ◽

10.1049/el:19900084 ◽

1990 ◽

Vol 26 (2) ◽

pp. 122 ◽

Cited By ~ 2

Author(s):

J. Akagi ◽

Y. Kuriyama ◽

K. Morizuka ◽

M. Asaka ◽

K. Tsuda ◽

...

Keyword(s):

Bipolar Transistor ◽

Heterojunction Bipolar Transistor ◽

Decision Circuit

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Using constant base current as a boundary condition for one-dimensional AlGaAs/GaAs heterojunction bipolar transistor simulation

Electronics Letters ◽

10.1049/el:19900964 ◽

1990 ◽

Vol 26 (18) ◽

pp. 1501 ◽

Cited By ~ 8

Author(s):

L.L. Liou ◽

C.I. Huang

Keyword(s):

Boundary Condition ◽

Bipolar Transistor ◽

Heterojunction Bipolar Transistor ◽

One Dimensional ◽

Base Current

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InGaP∕GaAs0.94Sb0.06∕GaAs double heterojunction bipolar transistor

Electronics Letters ◽

10.1049/el:20020201 ◽

2002 ◽

Vol 38 (6) ◽

pp. 289 ◽

Cited By ~ 3

Author(s):

B.P. Yan ◽

C.C. Hsu ◽

X.Q. Wang ◽

E.S. Yang

Keyword(s):

Bipolar Transistor ◽

Heterojunction Bipolar Transistor ◽

Double Heterojunction

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Ballistic two-dimensional lateral heterojunction bipolar transistor

Physical Review Research ◽

10.1103/physrevresearch.3.023158 ◽

2021 ◽

Vol 3 (2) ◽

Author(s):

Leonardo Lucchesi ◽

Gaetano Calogero ◽

Gianluca Fiori ◽

Giuseppe Iannaccone

Keyword(s):

Bipolar Transistor ◽

Heterojunction Bipolar Transistor ◽

Two Dimensional

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