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Analytical modeling of base transit time for a Si1−yGey heterojunction bipolar transistor
2009 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC)
◽
10.1109/edssc.2009.5394245
◽
2009
◽
Author(s):
Y. Arafat
◽
M.Z.R. Khan
◽
M.M.S. Hassan
Keyword(s):
Transit Time
◽
Analytical Modeling
◽
Bipolar Transistor
◽
Heterojunction Bipolar Transistor
Download Full-text
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◽
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Author(s):
Upoma Saha
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◽
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◽
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Numerical Simulation
◽
Transit Time
◽
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◽
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◽
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Analytical modelling of base transit time and early voltage of InP/InGaAs Heterojunction Bipolar Transistor for nonuniform base doping profile
IEEE Technology Students' Symposium
◽
10.1109/techsym.2011.5783823
◽
2011
◽
Author(s):
S Chowdhury
◽
S Basu
Keyword(s):
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◽
Bipolar Transistor
◽
Heterojunction Bipolar Transistor
◽
Analytical Modelling
◽
Doping Profile
◽
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Spatial analysis of the electron transit time in a silicon/germanium heterojunction bipolar transistor by drift-diffusion, hydrodynamic, and full-band Monte Carlo device simulation
2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502)
◽
10.1109/sispad.2000.871202
◽
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◽
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Base transit time of a heterojunction bipolar transistor (HBT) with Gaussian doped base under high-level of injection
2012 International Conference on Devices, Circuits and Systems (ICDCS)
◽
10.1109/icdcsyst.2012.6188685
◽
2012
◽
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◽
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◽
Bipolar Transistor
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Heterojunction Bipolar Transistor
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◽
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◽
1988
◽
Vol 49
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◽
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J. G. METCALFE
◽
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◽
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◽
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◽
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10 Gbit/s AlGaAs/GaAs heterojunction bipolar transistor decision circuit IC
Electronics Letters
◽
10.1049/el:19900084
◽
1990
◽
Vol 26
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◽
pp. 122
◽
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◽
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◽
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◽
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◽
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◽
...
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Bipolar Transistor
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◽
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Using constant base current as a boundary condition for one-dimensional AlGaAs/GaAs heterojunction bipolar transistor simulation
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◽
10.1049/el:19900964
◽
1990
◽
Vol 26
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◽
pp. 1501
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Cited By ~ 8
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◽
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InGaP∕GaAs0.94Sb0.06∕GaAs double heterojunction bipolar transistor
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◽
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◽
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◽
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◽
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◽
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◽
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◽
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◽
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