Numerical simulation of Silicon-Germanium Heterojunction Bipolar Transistor (HBT) in silvaco/atlas and analysis of HBT base transit time to achieve faster operation

Silvaco Atlas

2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502) ◽

Spatial analysis of the electron transit time in a silicon/germanium heterojunction bipolar transistor by drift-diffusion, hydrodynamic, and full-band Monte Carlo device simulation

10.1109/sispad.2000.871202 ◽

2002 ◽

Cited By ~ 1

Author(s):

C. Jungemann ◽

B. Neinhus ◽

B. Meinerzhagen

Keyword(s):

Monte Carlo ◽

Spatial Analysis ◽

Transit Time ◽

Silicon Germanium ◽

Device Simulation ◽

Bipolar Transistor ◽

Drift Diffusion ◽

Full Band ◽

Monte Carlo Device Simulation

Modeling the temperature-dependent Early voltage of a silicon germanium heterojunction bipolar transistor

IEEE Transactions on Electron Devices ◽

10.1109/16.766886 ◽

1999 ◽

Vol 46 (6) ◽

pp. 1207-1211 ◽

Cited By ~ 1

Author(s):

S.A. Wartenberg ◽

C.R. Westgate

Keyword(s):

Silicon Germanium ◽

Bipolar Transistor ◽

Temperature Dependent

A single-event transient induced by a pulsed laser in a silicon—germanium heterojunction bipolar transistor

Chinese Physics B ◽

10.1088/1674-1056/22/5/056103 ◽

2013 ◽

Vol 22 (5) ◽

pp. 056103 ◽

Cited By ~ 3

Author(s):

Ya-Bin Sun ◽

Jun Fu ◽

Jun Xu ◽

Yu-Dong Wang ◽

Wei Zhou ◽

...

Keyword(s):

Silicon Germanium ◽

Pulsed Laser ◽

Bipolar Transistor ◽

Single Event ◽

Single Event Transient

Base transit time of a Heterojunction Bipolar Transistor with Gaussian doped base

International Conference on Electrical & Computer Engineering (ICECE 2010) ◽

10.1109/icelce.2010.5700643 ◽

2010 ◽

Cited By ~ 3

Author(s):

S. M. Moududul Islam ◽

Yeasir Arafat ◽

Iqbal Bahar Chowdhury ◽

M. Ziaur Rahman Khan ◽

M. M. Shahidul Hassan

Keyword(s):

Transit Time ◽

Bipolar Transistor ◽

Silicon–germanium (SiGe) heterojunction bipolar transistor (HBT) and bipolar complementary metal oxide semiconductor (BiCMOS) technologies

Silicon–Germanium (SiGe) Nanostructures ◽

10.1533/9780857091420.4.473 ◽

2011 ◽

pp. 473-498

Author(s):

K. Washio

Keyword(s):

Metal Oxide ◽

Silicon Germanium ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Bipolar Transistor ◽

Oxide Semiconductor

2009 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC) ◽

Analytical modeling of base transit time for a Si1−yGey heterojunction bipolar transistor

10.1109/edssc.2009.5394245 ◽

2009 ◽

Author(s):

Y. Arafat ◽

M.Z.R. Khan ◽

M.M.S. Hassan

Keyword(s):

Transit Time ◽

Analytical Modeling ◽

Bipolar Transistor ◽

Silicon germanium heterojunction bipolar transistor electrostatic discharge power clamps and the Johnson Limit in RF BICMOS SiGe technology

Journal of Electrostatics ◽

10.1016/s0304-3886(02)00064-5 ◽

2002 ◽

Vol 56 (3) ◽

pp. 341-362 ◽

Cited By ~ 2

Author(s):

Steven H Voldman ◽

Brian Ronan ◽

Patrick A Juliano ◽

Alan Botula ◽

David T Hui ◽

...

Keyword(s):

Silicon Germanium ◽

Electrostatic Discharge ◽

Bipolar Transistor ◽

Discharge Power

Analytical modelling of base transit time and early voltage of InP/InGaAs Heterojunction Bipolar Transistor for nonuniform base doping profile

IEEE Technology Students' Symposium ◽

10.1109/techsym.2011.5783823 ◽

2011 ◽

Author(s):

S Chowdhury ◽

S Basu

Keyword(s):

Transit Time ◽

Bipolar Transistor ◽

Analytical Modelling ◽

Doping Profile ◽

Base Doping

Silicon Germanium Heterojunction Bipolar Transistor for Digital Application

TELKOMNIKA (Telecommunication Computing Electronics and Control) ◽

10.12928/telkomnika.v10i3.828 ◽

2012 ◽

Vol 10 (3) ◽

pp. 493

Author(s):

Engelin Shintadewi Julian

Keyword(s):

Silicon Germanium ◽

Bipolar Transistor ◽

Silicon Germanium Heterojunction Bipolar Transistor for Digital Application

TELKOMNIKA Indonesian Journal of Electrical Engineering ◽

10.11591/telkomnika.v10i3.609 ◽

2012 ◽

Vol 10 (3) ◽

Author(s):

Engelin Shintadewi Julian

Keyword(s):

Silicon Germanium ◽

Bipolar Transistor ◽