Improving the data retention of phase change memory by using a doping element in selected Ge2Sb2Te5

2019 ◽  
Vol 40 (4) ◽  
pp. 042402
Author(s):  
Yaoyao Lu ◽  
Daolin Cai ◽  
Yifeng Chen ◽  
Shuai Yan ◽  
Lei Wu ◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Memory ◽  
Data Retention ◽  
Doping Element ◽  
Change Memory

Investigation of Ge-Sn-Te alloy for long data retention and high speed phase change memory application

2013 ◽  
Vol 103 (14) ◽  
pp. 142112 ◽  
Author(s):  
Zhonghua Zhang ◽  
Sannian Song ◽  
Zhitang Song ◽  
Yan Cheng ◽  
Feng Rao ◽  
...  
Keyword(s):  
Phase Change ◽  
High Speed ◽  
Phase Change Memory ◽  
Data Retention ◽  
Change Memory

Investigation of Time Instability Factors in Ti-SbxTe Based Phase Change Memory

2013 ◽  
Vol 873 ◽  
pp. 825-830 ◽  
Author(s):  
Xing Long Ji ◽  
Liang Cai Wu ◽  
Feng Rao ◽  
Zhi Tang Song ◽  
Min Zhu ◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Materials ◽  
Crystallization Process ◽  
Phase Change Memory ◽  
Structure Model ◽  
Data Retention ◽  
Spontaneous Crystallization ◽  
Change Trend ◽  
Band Structure Model ◽  
Change Memory

In this paper, the two time instability factors in phase change memory, amorphous resistance drift and spontaneous crystallization process, are studied based on Ti2.75(SbxTe)97.25 and Ti6.85(SbxTe)93.15. The drift coefficients of both components are calculated and compared under room temperature. The reason why the drift coefficient decreases with the Ti concentration increases is discussed based on the band structure model of amorphous phase change materials. And the data retention change trend is also presented. The experiment results and the physical explaination can also be extended to other metallic element doped SbxTe alloy phase change materials.

Ga14Sb86 film for ultralong data retention phase-change memory

2011 ◽  
Vol 109 (6) ◽  
pp. 064503 ◽  
Author(s):  
Yegang Lu ◽  
Sannian Song ◽  
Zhitang Song ◽  
Bo Liu
Keyword(s):  
Phase Change ◽  
Phase Change Memory ◽  
Data Retention ◽  
Change Memory

Investigation of data retention under current bias for phase change memory

2016 ◽  
Author(s):  
Yao-Yao Lu ◽  
Dao-Lin Cai ◽  
Yi-Feng Chen ◽  
Yue-Qing Wang ◽  
Hong-Yang Wei ◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Memory ◽  
Data Retention ◽  
Change Memory

Modeling of data retention statistics of phase-change memory with confined- and mushroom-type cells

2016 ◽  
Vol 63 ◽  
pp. 284-290 ◽  
Author(s):  
Yongwoo Kwon ◽  
Byoungnam Park ◽  
Heesun Yang ◽  
Jin-Ha Hwang ◽  
Dae-Hwan Kang ◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Memory ◽  
Data Retention ◽  
Change Memory

Nanocomposite Phase-Change Memory Alloys for Very High Temperature Data Retention

2010 ◽  
Vol 31 (8) ◽  
pp. 869-871 ◽  
Author(s):  
Wally Czubatyj ◽  
Stephen J Hudgens ◽  
Charles Dennison ◽  
Carl Schell ◽  
Tyler Lowrey
Keyword(s):  
High Temperature ◽  
Phase Change ◽  
Phase Change Memory ◽  
Temperature Data ◽  
Data Retention ◽  
High Temperature Data ◽  
Very High ◽  
Change Memory

Crystallization behaviors of ZnxSb100−x thin films for ultralong data retention phase change memory applications

CrystEngComm ◽  
2014 ◽  
Vol 16 (5) ◽  
pp. 757-762 ◽  
Author(s):  
Yimin Chen ◽  
Guoxiang Wang ◽  
Xiang Shen ◽  
Tiefeng Xu ◽  
R. P. Wang ◽  
...  
Keyword(s):  
Thin Films ◽  
Activation Energy ◽  
Phase Change ◽  
Melting Temperature ◽  
Crystallization Temperature ◽  
Phase Change Memory ◽  
Data Retention ◽  
Memory Applications ◽  
Change Memory ◽  
Lower Melting Temperature

ZnSb films have higher crystallization temperature (~257 °C), larger crystalline activation energy (~5.63 eV), better 10 year-data-retention (~201 °C) and lower melting temperature (~500 °C).

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