scholarly journals Design of a compact microwave-absorbing load based on sintered material FeSiAl

2020 ◽  
Vol 1633 ◽  
pp. 012078
Author(s):  
Fang Zhang ◽  
Lianguan Shen ◽  
Yuanji Pei
Author(s):  
C. H. Carter ◽  
J. E. Lane ◽  
J. Bentley ◽  
R. F. Davis

Silicon carbide (SiC) is the generic name for a material which is produced and fabricated by a number of processing routes. One of the three SiC materials investigated at NCSU is Norton Company's NC-430, which is produced by reaction-bonding of Si vapor with a porous SiC host which also contains free C. The Si combines with the free C to form additional SiC and a second phase of free Si. Chemical vapor deposition (CVD) of CH3SiCI3 onto a graphite substrate was employed to produce the second SiC investigated. This process yielded a theoretically dense polycrystalline material with highly oriented grains. The third SiC was a pressureless sintered material (SOHIO Hexoloy) which contains B and excess C as sintering additives. These materials are candidates for applications such as components for gas turbine, adiabatic diesel and sterling engines, recouperators and heat exchangers.


2014 ◽  
Vol 29 (10) ◽  
pp. 1093 ◽  
Author(s):  
ZHOU Wei ◽  
XIAO Peng ◽  
LI Yang ◽  
LUO Heng ◽  
HONG Wen

2013 ◽  
Vol 28 (5) ◽  
pp. 479-484 ◽  
Author(s):  
Wei ZHOU ◽  
Peng XIAO ◽  
Yang LI ◽  
Heng LUO ◽  
Liang ZHOU

2009 ◽  
Vol 24 (1) ◽  
pp. 97-102
Author(s):  
Xiao-Wei WU ◽  
Yu-Jie FENG ◽  
Han WEI ◽  
Yan-Kun LIU

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