scholarly journals Analysis of the possibility of creating an acoustic velocity sensor using GaN epitaxial films

2021 ◽  
Vol 2086 (1) ◽  
pp. 012053
Author(s):  
Y Enns ◽  
A Kazakin ◽  
Y Akulshin ◽  
A Mizerov ◽  
R Kleimanov
Keyword(s):  
Directional Pattern ◽  
Epitaxial Films ◽  
Acoustic Velocity ◽  
Electrical Characteristics ◽  
Velocity Sensor

Abstract This paper results in results of analyzing the possibility of creating an acoustic velocity sensor using epitaxial GaN films. Technology for the fabrication of a microelectromechanical acoustic velocity sensor was developed and a prototype of the sensor was produced. The simulation of the characteristics of the obtained acoustic velocity sensors was carried out on the basis of the measured electrical characteristics, where the sensitivity and the directional pattern were determined.

Comparison of Structural and Electrical Characteristics of Solid-Phase Epitaxial Films Recrystallized By Rapid Thermal Annealing and Furnace Annealing

1985 ◽  
Vol 53 ◽  
Author(s):  
R. Sundaresan ◽  
P.-H. Chang ◽  
S.D.S. Malhi ◽  
H.W. Lam
Keyword(s):  
Solid Phase ◽  
Epitaxial Films ◽  
Electrical Characteristics ◽  
Lateral Extension ◽  
Rapid Thermal Anneal ◽  
Furnace Annealing ◽  
Layer 4 ◽  
Polysilicon Films ◽  
Average Electron ◽  
Temperature Furnace

ABSTRACTSolid-phase epitaxial regrowth of polysilicon films. amorphized by a room-temperature silicon implant. has been achieved using a (low temperature) furnace anneal or a (high temperature) rapid thermal anneal. Lateral extension of the growth onto an oxide layer, 4 μm wide, has also been observed. The electrical properties of the films were examined by building MO2S devices in them. Average electron mobilities of 520 cm2/v-sec and 200 cm2/v-sec have been measured for films regrown on top of silicon and oxide respectively.

Flow‐induced self‐noise on a spherical acoustic velocity sensor

1997 ◽  
Vol 101 (5) ◽  
pp. 3053-3053 ◽  
Author(s):  
Gerald C. Lauchle ◽  
Andrew R. Jones
Keyword(s):  
Acoustic Velocity ◽  
Velocity Sensor

Influence of pulsed nanosecond volume discharge in atmospheric-pressure air on the electrical characteristics of MCT epitaxial films

2015 ◽  
Author(s):  
Denis V. Grigoryev ◽  
Alexandr V. Voitsekhovskii ◽  
Kirill A. Lozovoy ◽  
Sergey N. Nesmelov ◽  
Stanislav M. Dzyadukh ◽  
...  
Keyword(s):  
Atmospheric Pressure ◽  
Epitaxial Films ◽  
Volume Discharge ◽  
Electrical Characteristics

Electrical Characteristics and Reliability of 4H-SiC PiN Diodes Fabricated on In-House Grown and Commercial Epitaxial Films

2005 ◽  
Vol 483-485 ◽  
pp. 961-964
Author(s):  
Peter A. Losee ◽  
Can Hua Li ◽  
Joseph Seiler ◽  
Robert E. Stahlbush ◽  
T. Paul Chow ◽  
...  
Keyword(s):  
Epitaxial Films ◽  
Stacking Fault ◽  
Electrical Performance ◽  
Electrical Characteristics ◽  
Fault Propagation ◽  
Pin Diodes ◽  
Design Considerations

4H-SiC pin diodes fabricated on epitaxial films grown in-house on various substrates along with devices fabricated on commercial epi-material are presented. Defects have been observed using electroluminescence imaging and are correlated with device electrical performance. Most diodes fabricated with in-house epi-layers up to 25µm thick show relatively stable forward biased operation, although stacking fault propagation has been confirmed in all samples using electroluminescence imaging. Significant stacking fault propagation induced in the vicinity of testing probes has been observed and resulting design considerations are discussed.

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