Influence of pulsed nanosecond volume discharge in atmospheric-pressure air on the electrical characteristics of MCT epitaxial films

2015 ◽  
Author(s):  
Denis V. Grigoryev ◽  
Alexandr V. Voitsekhovskii ◽  
Kirill A. Lozovoy ◽  
Sergey N. Nesmelov ◽  
Stanislav M. Dzyadukh ◽  
...  
Keyword(s):  
Atmospheric Pressure ◽  
Epitaxial Films ◽  
Volume Discharge ◽  
Electrical Characteristics

Influence of the Plasma of Nanosecond Diffuse Discharge in Air at Atmospheric Pressure on the Electrophysical Properties of Epitaxial CdHgTe Films

2016 ◽  
Vol 685 ◽  
pp. 676-679
Author(s):  
K.A. Lozovoy ◽  
D.V. Grigoryev ◽  
V.F. Tarasenko ◽  
M.A. Shulepov
Keyword(s):  
Atmospheric Pressure ◽  
Epitaxial Films ◽  
Uniform Electric Field ◽  
Physical Parameters ◽  
Volume Discharge ◽  
Nanosecond Duration ◽  
Near Surface ◽  
Type Conductivity ◽  
Diffuse Discharge ◽  
P Type

In this paper the influence of the volume discharge of nanosecond duration formed in a non-uniform electric field at atmospheric pressure on samples of CdHgTe (MCT) epitaxial films of p-type conductivity is investigated. Measurements of electro-physical parameters of MCT samples after irradiation have shown that a layer exhibiting n-type conductivity is formed in the near-surface area of epitaxial films. After more than 600 pulses of influence parameters and thickness of the resulting n-layer is such that the measured field dependence of Hall coefficient corresponds to the material of n-type conductivity. The obtained results show that application of volume nanosecond discharge in air at atmospheric pressure is promising for the modification of the surface properties of epitaxial films of MCT.

Influence of complex impact of the picosecond electron beam and volume discharge in atmospheric-pressure air on the electronic properties of MCT epitaxial films surface

2015 ◽  
Author(s):  
Denis V. Grigoryev ◽  
Vadim A. Novikov ◽  
Dmitriy A. Bezrodnyy ◽  
Viktor F. Tarasenko ◽  
Michail A. Shulepov ◽  
...  
Keyword(s):  
Electron Beam ◽  
Electronic Properties ◽  
Atmospheric Pressure ◽  
Epitaxial Films ◽  
Volume Discharge

Comparison of Structural and Electrical Characteristics of Solid-Phase Epitaxial Films Recrystallized By Rapid Thermal Annealing and Furnace Annealing

1985 ◽  
Vol 53 ◽  
Author(s):  
R. Sundaresan ◽  
P.-H. Chang ◽  
S.D.S. Malhi ◽  
H.W. Lam
Keyword(s):  
Solid Phase ◽  
Epitaxial Films ◽  
Electrical Characteristics ◽  
Lateral Extension ◽  
Rapid Thermal Anneal ◽  
Furnace Annealing ◽  
Layer 4 ◽  
Polysilicon Films ◽  
Average Electron ◽  
Temperature Furnace

ABSTRACTSolid-phase epitaxial regrowth of polysilicon films. amorphized by a room-temperature silicon implant. has been achieved using a (low temperature) furnace anneal or a (high temperature) rapid thermal anneal. Lateral extension of the growth onto an oxide layer, 4 μm wide, has also been observed. The electrical properties of the films were examined by building MO2S devices in them. Average electron mobilities of 520 cm2/v-sec and 200 cm2/v-sec have been measured for films regrown on top of silicon and oxide respectively.

Investigation on electrical characteristics of TFTs fabricated with germanium films crystallized by atmospheric pressure micro-thermal-plasma-jet irradiation

2021 ◽  
Author(s):  
Takuma Sato ◽  
Hiroaki Hanafusa ◽  
Seiichiro HIGASHI
Keyword(s):  
Thermal Plasma ◽  
Atmospheric Pressure ◽  
Hole Concentration ◽  
Thin Film Transistor ◽  
Plasma Jet ◽  
Scanning Speed ◽  
Electrical Characteristics ◽  
Thermal Plasma Jet ◽  
High Carrier Mobility ◽  
High Carrier

Abstract Crystalline-germanium (c-Ge) is an attractive material for a thin-film transistor (TFT) channel because of its high carrier mobility and applicability to a low-temperature process. We present the electrical characteristics of c-Ge crystallized by atmospheric pressure micro-thermal-plasma-jet (µ-TPJ). The µ-TPJ crystalized c-Ge showed the maximum Hall mobility of 1070 cm2·V−1·s−1 with its hole concentration of ~ 1016 cm−3, enabling us to fabricate the TFT with field-effect mobility (μ FE) of 196 cm2·V−1·s−1 and ON/OFF ratio (R ON/OFF) of 1.4 × 104. On the other hand, RON/OFFs and μFEs were dependent on the scanning speed of the TPJ, inferring different types of defects were induced in the channel regions. These findings show not only a possibility of the TPJ irradiation as a promising method to make a c-Ge TFT on insulating substrates.

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