scholarly journals Investigation of the optical properties of InAs/InGaAs/GaAs quantum dot in quantum well multilayer structures for infrared photodetectors

2012 ◽  
Vol 356 ◽  
pp. 012032 ◽  
Author(s):  
Ts Ivanov ◽  
V Donchev ◽  
K Germanova ◽  
Ts Tellaleva ◽  
K Borissov ◽  
...  
2008 ◽  
Vol 20 (18) ◽  
pp. 1575-1577
Author(s):  
Shu-Ting Chou ◽  
Shih-Yen Lin ◽  
Chi-Che Tseng ◽  
Yi-Hao Chen ◽  
Cheng-Nan Chen ◽  
...  

2009 ◽  
Vol 95 (9) ◽  
pp. 093502 ◽  
Author(s):  
T. Yamanaka ◽  
B. Movaghar ◽  
S. Tsao ◽  
S. Kuboya ◽  
A. Myzaferi ◽  
...  

2003 ◽  
Author(s):  
Victor Ryzhii ◽  
Maxim Ryzhii ◽  
Irina Khmyrova ◽  
Robert Suris ◽  
Vladimir Mitin ◽  
...  

2011 ◽  
Vol 47 (5) ◽  
pp. 577-590 ◽  
Author(s):  
I McKerracher ◽  
J Wong-Leung ◽  
G Jolley ◽  
Lan Fu ◽  
H H Tan ◽  
...  

2003 ◽  
Vol 14 (12) ◽  
pp. 1259-1261 ◽  
Author(s):  
Zhangcheng Xu ◽  
Kristjan Leosson ◽  
Dan Birkedal ◽  
Vadim Lyssenko ◽  
Jørn M Hvam ◽  
...  

Author(s):  
S. D. Gunapala ◽  
D. Z. Ting ◽  
A. Soibel ◽  
S. A. Keo ◽  
S. B. Rafol ◽  
...  

2021 ◽  
Vol 21 (9) ◽  
pp. 4908-4910
Author(s):  
Heedae Kim

We observed exciton and biexciton states in a single GaAs quantum dot at 4 K using micro pho-toluminescence system and investigated power dependent photoluminescence measurements to identify both exciton and biexciton states. The biexciton and exciton states showed quadratic (a~2.2) and linear (a~0.95) increasing power factor, respectively. The large energy difference (~0.2 meV) from exciton states for the perpendicular polarization was observed.


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