Optical Properties from a Single GaAs Quantum Dot Structure

2021 ◽  
Vol 21 (9) ◽  
pp. 4908-4910
Author(s):  
Heedae Kim
Keyword(s):  
Optical Properties ◽  
Quantum Dot ◽  
Power Factor ◽  
Energy Difference ◽  
Large Energy ◽  
Gaas Quantum Dot ◽  
Perpendicular Polarization

We observed exciton and biexciton states in a single GaAs quantum dot at 4 K using micro pho-toluminescence system and investigated power dependent photoluminescence measurements to identify both exciton and biexciton states. The biexciton and exciton states showed quadratic (a~2.2) and linear (a~0.95) increasing power factor, respectively. The large energy difference (~0.2 meV) from exciton states for the perpendicular polarization was observed.

Optical properties of excitons in strained Gax In1-xAs/GaAs quantum dot: ef fect of geometrical conf inement on exciton g-factor

2013 ◽  
Vol 11 (8) ◽  
pp. 082501-82507
Author(s):  
N. R. Senthil Kumar N. R. Senthil Kumar ◽  
A. John Peter A. John Peter ◽  
Chang Woo Lee Chang Woo Lee
Keyword(s):  
Optical Properties ◽  
Quantum Dot ◽  
G Factor ◽  
Gaas Quantum Dot

Structural and optical properties of ultrananocrystalline diamond / InGaAs/GaAs quantum dot structures

2009 ◽  
Vol 518 (5) ◽  
pp. 1489-1492 ◽  
Author(s):  
C. Popov ◽  
A. Gushterov ◽  
L. Lingys ◽  
C. Sippel ◽  
J.P. Reithmaier
Keyword(s):  
Optical Properties ◽  
Quantum Dot ◽  
Structural And Optical Properties ◽  
Ultrananocrystalline Diamond ◽  
Gaas Quantum Dot

In-Plane Thermoelectric Properties of Horizontally Aligned InAs/GaAs Quantum Dot Superlattices

2006 ◽  
Author(s):  
A. Yadav ◽  
K. P. Pipe ◽  
W. Ye ◽  
R. S. Goldman
Keyword(s):  
Quantum Dot ◽  
Band Structure ◽  
Thermoelectric Properties ◽  
Power Factor ◽  
Quantum Size Effects ◽  
Relaxation Time Approximation ◽  
Quantum Size ◽  
Constant Relaxation Time ◽  
Gaas Quantum Dot ◽  
Parallel Conductor

The thermoelectric properties of aligned quantum dot chains are calculated taking in account the change in band structure due to quantum size effects. From the calculated band structure, the Seebeck coefficient and electrical conductivity are calculated in a constant relaxation time approximation (CRTA). The power factor is plotted as a function of the size and spacing of dots and an increase is shown in the power factor for decreasing dot size. The net power factor is calculated using a parallel conductor model. The results are compared to the case of randomly spaced dots which have a power factor calculated using an effective resistance model.

Optical properties of bilayer InAs/GaAs quantum dot structures: Influence of strain and surface morphology

2002 ◽  
Vol 66 (7) ◽  
Author(s):  
P. B. Joyce ◽  
E. C. Le Ru ◽  
T. J. Krzyzewski ◽  
G. R. Bell ◽  
R. Murray ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Dot ◽  
Surface Morphology ◽  
Gaas Quantum Dot

Optical properties of wetting layers in stacked InAs/GaAs quantum dot structures

2002 ◽  
Vol 13 (2-4) ◽  
pp. 289-292 ◽  
Author(s):  
A.T Winzer ◽  
R Goldhahn ◽  
G Gobsch ◽  
H Heidemeyer ◽  
O.G Schmidt ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Dot ◽  
Wetting Layers ◽  
Gaas Quantum Dot

Optical properties of InAs/AlyGa1−yAs/GaAs quantum dot structures

2002 ◽  
Vol 88 (2-3) ◽  
pp. 234-237 ◽  
Author(s):  
P Altieri ◽  
S Sanguinetti ◽  
M Gurioli ◽  
E Grilli ◽  
M Guzzi ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Dot ◽  
Gaas Quantum Dot
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