scholarly journals The impact of purging on the quality of AlGaN/GaN multiple quantum wells grown on AlN/sapphire template

2017 ◽  
Vol 844 ◽  
pp. 012015
Author(s):  
Shuchang Wang ◽  
Xiong Zhang ◽  
Zili Wu ◽  
Jianguo Zhao ◽  
Qian Dai ◽  
...  
2014 ◽  
Vol 23 (03) ◽  
pp. 1450029 ◽  
Author(s):  
Błażej Jabłoński

The kind of defects and their concentration have a significant impact on photorefractive phenomena taking place within the structure of semi-insulating GaAs / AlGaAs multiple quantum wells. In this paper, the impact of donor-to-acceptor concentration ratio on the grating in photorefractive two-waves mixing was examined. The formation of the space charge field for different defect concentrations as well as different external electric field intensities are analyzed.


2011 ◽  
Vol 679-680 ◽  
pp. 801-803
Author(s):  
Ji Sheng Han ◽  
Sima Dimitrjiev ◽  
Li Wang ◽  
Alan Iacopi ◽  
Qu Shuang ◽  
...  

Gallium nitrides are primarily used for their excellent light emission properties. GaN LEDs are mostly grown on foreign substrates, essentially sapphire and SiC, but more recently, also on Si substrates. In this paper, we will demonstrate that the high structural quality of InGaN/GaN multiple quantum wells can be deposited on 3C-SiC/Si (111) substrate using MOCVD. This demonstrates that 3C-SiC/Si is a promising template for the epitaxial growth of InGaN/GaN multiple quantum wells for LEDs.


2006 ◽  
Vol 286 (2) ◽  
pp. 209-212 ◽  
Author(s):  
Niu Nanhui ◽  
Wang Huaibing ◽  
Liu Jianping ◽  
Liu Naixin ◽  
Xing Yanhui ◽  
...  

2019 ◽  
Vol 96 ◽  
pp. 167-172
Author(s):  
Jinjuan Du ◽  
Shengrui Xu ◽  
Zhiyu Lin ◽  
Yachao Zhang ◽  
Jincheng Zhang ◽  
...  

2011 ◽  
Vol 519 (18) ◽  
pp. 6092-6096 ◽  
Author(s):  
Shih-Wei Feng ◽  
Hung-Cheng Lin ◽  
Jen-Inn Chyi ◽  
Chin-Yi Tsai ◽  
C.J. Huang ◽  
...  

2019 ◽  
Vol 520 ◽  
pp. 82-84 ◽  
Author(s):  
N.M. Shmidt ◽  
A.E. Chernyakov ◽  
N.A. Tal'nishnih ◽  
A.E. Nikolaev ◽  
A.V. Sakharov ◽  
...  

1987 ◽  
Vol 48 (C5) ◽  
pp. C5-511-C5-515 ◽  
Author(s):  
J. L. OUDAR ◽  
J. DUBARD ◽  
F. ALEXANDRE ◽  
D. HULIN ◽  
A. MIGUS ◽  
...  

1987 ◽  
Vol 48 (C5) ◽  
pp. C5-239-C5-242 ◽  
Author(s):  
E. GLASER ◽  
B. V. SHANABROOK ◽  
R. J. WAGNER ◽  
R. L. HAWKINS ◽  
W. J. MOORE ◽  
...  

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