ABSTRACTSecondary electron emission spectroscopy is used to examine the transport and emission of low-energy electrons in several wide bandgap materials. In particular, the secondary emission properties of C(100), C(111), and CVD diamond samples are compared in order to examine the effect of crystallographic orientation on the emission characteristics. Very high yields are obtained from hydrogenated and cesiated negative-electron-affinity surfaces of all three samples, indicating that low-energy electrons are transported and emitted very efficiently in the diamond materials. While the energy distribution of the emitted electrons is found to be sharply peaked at low energy for all three samples, the energy distributions measured from the C(111) surfaces are broader and reveal structure in the energy gap. The different emission processes at the C(100) and C(111) surfaces may account for the energy distributions observed from the polycrystalline CVD diamond. Finally, initial secondary emission measurements are taken from GaN and AlGaN films grown by molecular beam epitaxy. The secondary emission is not as strong as from the diamond samples, and the measurements reveal the impact of interface and surface barriers on the emission process.
Measurement of the secondary electron emission from CVD diamond films using phosphor screen detectors
