Measurements of charge sharing in a hybrid pixel photon counting CdTe detector

2021 ◽  
Vol 16 (12) ◽  
pp. C12027
Author(s):  
A. Krzyzanowska

Abstract Hybrid pixel radiation detectors working in a single-photon counting mode have gained increasing attention due to their noiseless imaging and high dynamic range. Due to the fact that sensors of different materials can be attached to the readout circuit, they allow operation with a wide range of photon energies. The performance of the single photon counting detectors is limited by pile-up. To allow a detector to work under high flux conditions, the pixel size is reduced, which minimizes detector dead time. However, with smaller pixel sizes the charge sharing effect, a phenomenon that deteriorates both detection efficiency and spatial resolution is more profound. The influence of charge sharing on the detector performance can be quantified using parameterization of the s-curve obtained in the spectral response measurements. The article presents the measurements of the response function of a hybrid pixelated photon counting detector for certain primary energy, which corresponds to the probability of detecting a photon as a function of its energy deposition. The measurements were carried out using an X-ray tube by performing a threshold scan during illumination with X-ray photons of a 1.5 mm and 0.75 mm thick CdTe detector with 100 µm pixel pitch. The charge size cloud depends on the sensor material, the bias voltage, and the sensor thickness. Therefore, the experimental data from a sensor biased with different bias voltages are compared to the theoretical results based on a cascaded model of a single-photon counting segmented silicon detector. The study of the charge sharing influence on the spatial resolution of the CdTe detector will serve for a further study of the possible implementations of the algorithms achieving subpixel resolution, in which the charge sharing becomes the desired effect since the charge division in the pixels is used to interpolate the photon interaction position.

Author(s):  
A. Bergamaschi ◽  
R. Dinapoli ◽  
B. Henrich ◽  
I. Johnson ◽  
A. Mozzanica ◽  
...  

2021 ◽  
Author(s):  
Julia R. Lazzari-Dean ◽  
Evan W. Miller

AbstractBackgroundMembrane potential (Vmem) exerts physiological influence across a wide range of time and space scales. To study Vmem in these diverse contexts, it is essential to accurately record absolute values of Vmem, rather than solely relative measurements.Materials & MethodsWe use fluorescence lifetime imaging of a small molecule voltage sensitive dye (VF2.1.Cl) to estimate mV values of absolute membrane potential.ResultsWe test the consistency of VF2.1.Cl lifetime measurements performed on different single photon counting instruments and find that they are in striking agreement (differences of <0.5 ps/mV in the slope and <50 ps in the y-intercept). We also demonstrate that VF2.1.Cl lifetime reports absolute Vmem under two-photon (2P) illumination with better than 20 mV of Vmem resolution, a nearly 10-fold improvement over other lifetime-based methods.ConclusionsWe demonstrate that VF-FLIM is a robust and portable metric for Vmem across imaging platforms and under both one-photon and two-photon illumination. This work is a critical foundation for application of VF-FLIM to record absolute membrane potential signals in thick tissue.


2004 ◽  
Vol 75 (10) ◽  
pp. 3705-3707 ◽  
Author(s):  
C. Stoeckl ◽  
W. Theobald ◽  
T. C. Sangster ◽  
M. H. Key ◽  
P. Patel ◽  
...  

2021 ◽  
Vol 16 (12) ◽  
pp. C12014
Author(s):  
M. Zoladz ◽  
P. Grybos ◽  
R. Szczygiel

Abstract X-ray imaging of moving objects using line detectors remains the most popular method of object content and structure examination with a typical resolution limited to 0.4–1 mm. Higher resolutions are difficult to obtain as, for the detector in the form of a single pixel row, the narrower the detector is, the lower the image Signal to Noise Ratio (SNR). This is because, for smaller pixel sizes, fewer photons hit the pixel in each time unit for a given radiation intensity. To overcome the trade-off between the SNR and spatial resolution, a two-dimensional sensor, namely a pixel matrix can be used. Imaging of moving objects with a pixel matrix requires time-domain integration (TDI). Straightforward TDI implementation is based on the proper accumulation of images acquired during consecutive phases of an object’s movement. Unfortunately, this method is much more demanding regarding data transfer and processing. Data from the whole pixel matrix instead of a single pixel row must be transferred out of the chip and then processed. The alternative approach is on-chip TDI implementation. It takes advantage of photons acquired by multiple rows (a higher SNR), but generates similar data amount as a single pixel row and does not require data processing out of the chip. In this paper, on-chip TDI is described and verified by using a single photon counting two-dimensional (a matrix of 128 × 192 pixels) CdTe hybrid X-ray detector with the 100 µm × 100 µm pixel size with up to four energy thresholds per pixel. Spatial resolution verification is combined with the Material Discrimination X-ray (MDX) imaging method.


2022 ◽  
Vol 17 (01) ◽  
pp. C01036
Author(s):  
P. Grybos ◽  
R. Kleczek ◽  
P. Kmon ◽  
A. Krzyzanowska ◽  
P. Otfinowski ◽  
...  

Abstract This paper presents a readout integrated circuit (IC) of pixel architecture called MPIX (Multithreshold PIXels), designed for CdTe pixel detectors used in X-ray imaging applications. The MPIX IC area is 9.6 mm × 20.3 mm and it is designed in a CMOS 130 nm process. The IC core is a matrix of 96 × 192 square-shaped pixels of 100 µm pitch. Each pixel contains a fast analog front-end followed by four independently working discriminators and four 12-bit ripple counters. Such pixel architecture allows photon processing one by one and selecting the X-ray photons according to their energy (X-ray colour imaging). To fit the different range of applications the MPIX IC has 8 possible different gain settings, and it can process the X-ray photons of energy up to 154 keV. The MPIX chip is bump-bonded to the CdTe 1.5 mm thick pixel sensor with a pixel pitch of 100 µm. To deal with the charge sharing effect coming from a thick semiconductor pixel sensor, multithreshold pattern recognition algorithm is implemented in the readout IC. The implemented algorithm operates both in the analog domain (to recover the total charge spread between neighboring pixels, when a single X-ray photon hits the border of the pixel) and in the digital domain (to allocate a hit position to a single pixel).


Sign in / Sign up

Export Citation Format

Share Document