scholarly journals The radiation tolerance of specific optical fibres exposed to 650 kGy(Si) of ionizing radiation

2009 ◽  
Vol 4 (07) ◽  
pp. P07010-P07010 ◽  
Author(s):  
B Arvidsson ◽  
K Dunn ◽  
C Issever ◽  
B T Huffman ◽  
M Jones ◽  
...  
Keyword(s):  
Ionizing Radiation ◽  
Radiation Tolerance ◽  
Optical Fibres

Boosting the Ionizing Radiation Tolerance in the Mosfets Matching by Using Diamond Layout Style

2019 ◽  
Author(s):  
Vinicius Vono Peruzzi ◽  
William Souza da Cruz ◽  
Gabriel Augusto da Silva ◽  
Ricardo Cotrim Teixeira ◽  
Luis Eduardo Seixas Junior ◽  
...  
Keyword(s):  
Ionizing Radiation ◽  
Radiation Tolerance

scholarly journals Ionizing radiation tolerance of stacked Si3N4-SiO2 gate insulators for power MOSFETs

2020 ◽  
Vol 104 ◽  
pp. 113554 ◽  
Author(s):  
K. Muthuseenu ◽  
H.J. Barnaby ◽  
A. Patadia ◽  
K. Holbert ◽  
A. Privat
Keyword(s):  
Ionizing Radiation ◽  
Radiation Tolerance ◽  
Power Mosfets ◽  
Gate Insulators

Spectroscopic investigation of ionizing-radiation tolerance of aChlorophyceaegreen micro-alga

2008 ◽  
Vol 20 (10) ◽  
pp. 104216 ◽  
Author(s):  
E Farhi ◽  
C Rivasseau ◽  
M Gromova ◽  
E Compagnon ◽  
V Marzloff ◽  
...  
Keyword(s):  
Ionizing Radiation ◽  
Spectroscopic Investigation ◽  
Radiation Tolerance

Ionizing radiation tolerance of high-performance SiGe HBT's grown by UHV/CVD

1995 ◽  
Vol 42 (6) ◽  
pp. 1558-1566 ◽  
Author(s):  
J.A. Babcock ◽  
J.D. Cressler ◽  
L.S. Vempati ◽  
S.D. Clark ◽  
R.C. Jaeger ◽  
...  
Keyword(s):  
Ionizing Radiation ◽  
High Performance ◽  
Radiation Tolerance

scholarly journals Memory chips and units radiation tolerance dependence on supply voltage during irradiation and test

2018 ◽  
Vol 31 (1) ◽  
pp. 131-140
Author(s):  
Andrey Petrov ◽  
Alexander Nikiforov ◽  
Anna Boruzdina ◽  
Anastasia Ulanova ◽  
Andrey Yanenko
Keyword(s):  
Ionizing Radiation ◽  
Supply Voltage ◽  
Radiation Environment ◽  
Radiation Tolerance ◽  
Single Event ◽  
Physical Mechanisms ◽  
Data Corruption ◽  
Memory Circuits ◽  
Radiation Induced ◽  
Latch Up

In this work we investigate the influence of various memory chips supply voltage on their sensitivity to the radiation environment. The main physical mechanisms responsible for radiation-induced degradation at nominal, increased, and decreased supply voltage values are discussed. It is demonstrated that, depending on supply voltage value during irradiation and subsequent testing, device's tolerance to data corruption effects in memory circuits, single event latch-up (SEL) and hard errors induced by ionizing radiation can vary significantly. We also give some recommendations to perform radiation tests.

Ionizing radiation tolerance and low-frequency noise degradation in UHV/CVD SiGe HBT's

1995 ◽  
Vol 16 (8) ◽  
pp. 351-353 ◽  
Author(s):  
J.A. Babcock ◽  
J.D. Cressler ◽  
L.S. Vempati ◽  
S.D. Clark ◽  
R.C. Jaeger ◽  
...  
Keyword(s):  
Ionizing Radiation ◽  
Low Frequency ◽  
Frequency Noise ◽  
Radiation Tolerance ◽  
Low Frequency Noise

The ionizing radiation effect of erbium, ytterbium, or bismuth doped/co-doped optical fibres

2021 ◽  
Author(s):  
Yanhua Luo ◽  
Desheng Fan ◽  
Mingjie Ding ◽  
Qiancheng Zhao ◽  
Binbin Yan ◽  
...  
Keyword(s):  
Ionizing Radiation ◽  
Radiation Effect ◽  
Optical Fibres ◽  
Co Doped
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