scholarly journals Study on the Effect of Phosphorus Doping on Nano-SiC Structure

Author(s):  
Li Zhang ◽  
Ying Zhao ◽  
Pengyao Shi
Keyword(s):  
Nanomaterials ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 1519
Author(s):  
Jong Gyeong Kim ◽  
Sunghoon Han ◽  
Chanho Pak

The price and scarcity of platinum has driven up the demand for non-precious metal catalysts such as Fe-N-C. In this study, the effects of phosphoric acid (PA) activation and phosphorus doping were investigated using Fe-N-C catalysts prepared using SBA-15 as a sacrificial template. The physical and structural changes caused by the addition of PA were analyzed by nitrogen adsorption/desorption and X-ray diffraction. Analysis of the electronic states of Fe, N, and P were conducted by X-ray photoelectron spectroscopy. The amount and size of micropores varied depending on the PA content, with changes in pore structure observed using 0.066 g of PA. The electronic states of Fe and N did not change significantly after treatment with PA, and P was mainly found in states bonded to oxygen or carbon. When 0.135 g of PA was introduced per 1 g of silica, a catalytic activity which was increased slightly by 10 mV at −3 mA/cm2 was observed. A change in Fe-N-C stability was also observed through the introduction of PA.


2021 ◽  
Vol 11 (2) ◽  
pp. 298-305
Author(s):  
Giuseppe Scardera ◽  
Shaozhou Wang ◽  
Yu Zhang ◽  
Muhammad Umair Khan ◽  
Shuai Zou ◽  
...  

2021 ◽  
Vol 265 ◽  
pp. 124450
Author(s):  
Florentino López-Urías ◽  
Armando D. Martínez-Iniesta ◽  
Aarón Morelos-Gómez ◽  
Emilio Muñoz-Sandoval

1991 ◽  
Vol 58 (17) ◽  
pp. 1896-1898 ◽  
Author(s):  
T. O. Sedgwick ◽  
P. D. Agnello ◽  
D. Nguyen Ngoc ◽  
T. S. Kuan ◽  
G. Scilla

ACS Nano ◽  
2017 ◽  
Vol 11 (5) ◽  
pp. 4453-4462 ◽  
Author(s):  
Seokhyoung Kim ◽  
David J. Hill ◽  
Christopher W. Pinion ◽  
Joseph D. Christesen ◽  
James R. McBride ◽  
...  

2021 ◽  
Vol 130 (12) ◽  
pp. 125702
Author(s):  
Anurag Vohra ◽  
Geoffrey Pourtois ◽  
Roger Loo ◽  
Wilfried Vandervorst

2008 ◽  
Author(s):  
D. P. Norton ◽  
H. S. Kim ◽  
J. M Erie ◽  
S. J. Pearton ◽  
Y. L. Wang ◽  
...  

1992 ◽  
Vol 70 (10-11) ◽  
pp. 946-948
Author(s):  
S. B. Hewitt ◽  
S.-P. Tay ◽  
N. G. Tarr ◽  
A. R. Boothroyd

Stoichiometric SiC films formed by low-pressure chemical vapour deposition from a di-tert-butylsilane source with in situ phosphorus doping from tert-butylphosphine were used as emitters in heterojunction diodes fabricated on lightly doped silicon substrates. Diode characteristics are nearly ideal, with forward current dominated by injection-diffusion in the silicon substrate.


1991 ◽  
Vol 138 (1) ◽  
pp. 233-238 ◽  
Author(s):  
J. R. Flemish ◽  
R. E. Tressler ◽  
J. Ruzyllo

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