scholarly journals Evaluation of band gap energy and surface roughness for tin indium zinc oxide thin films by atomic force microscopy and electron spectroscopy

2018 ◽  
Vol 343 ◽  
pp. 012006
Author(s):  
Yus Rama Denny ◽  
Teguh Firmansyah ◽  
Isnaeni ◽  
Sovian Aritonang ◽  
AM Kartina
Keyword(s):  
Thin Films ◽  
Surface Roughness ◽  
Atomic Force Microscopy ◽  
Zinc Oxide ◽  
Electron Spectroscopy ◽  
Band Gap Energy ◽  
Force Microscopy ◽  
Gap Energy ◽  
Atomic Force ◽  
Indium Zinc Oxide

Copper Diffusion Into Aluminum-Silicon Metallizations by Accelerated Thermal and Electrical Stressing

1996 ◽  
Vol 428 ◽  
Author(s):  
G. O. Ramseyer ◽  
L. H. Walsh ◽  
J. V. Beasock ◽  
H. F. Helbig ◽  
R. C. Lacoe ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Atomic Force Microscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Depth Profiling ◽  
Copper Diffusion ◽  
Force Microscopy ◽  
Atomic Force ◽  
Line Widths ◽  
Electromigration Lifetime

AbstractPatterned 930 nm Al(1%-Si) interconnects over 147 nm of Cu were electromigration lifetime tested at 1.0–1.5 × 105 A/cm2 at 250 °C. The morphology of the surfaces of the electromigrated stripes with different line widths and times to failure were characterized by atomic force microscopy, and changes in surface roughness were compared. The diffusion of copper into the electromigrated aluminum stripes was determined by depth profiling using Auger electron spectroscopy. In particular, areas where hillocks formed were examined and compared to areas of median roughness.

Some electron probe X-ray microanalysis (EPMA)- and (BPES)-related physical investigations on ZnSSe thin-films growth composition-related kinetics

2009 ◽  
Vol 87 (6) ◽  
pp. 653-657 ◽  
Author(s):  
S. Fridjine ◽  
K. Boubaker ◽  
M. Amlouk
Keyword(s):  
Thin Films ◽  
Band Gap Energy ◽  
X Ray Diffraction ◽  
X Ray ◽  
Structure And Property ◽  
Force Microscopy ◽  
Gap Energy ◽  
Atomic Force ◽  
Composition Changes ◽  
Selenization Process

In this study, ZnSSe epilayers were grown on (111) ZnS sprayed thin films. The spectral analysis was carried out in the region from 400 to 1800 nm. Analyses of the transmittance and (or) reflectance spectra indicate a decrease of the band gap energy value Eg with selenization. As the selenization process changes the structure and property of prepared materials and therefore has a direct effect on their physical properties, one of the concerns of this paper is to investigate the depth-dependent composition changes as guides to monitoring the selenization kinetics. Photothermal, atomic force microscopy (AFM), and X-ray diffraction (XRD) investigations have also been carried out.

Measuring Thickness Changes in Thin Films Due to Chemical Reaction by Monitoring the Surface Roughness with In Situ Atomic Force Microscopy

2002 ◽  
Vol 8 (5) ◽  
pp. 422-428 ◽  
Author(s):  
L.Y. Beaulieu ◽  
A.D. Rutenberg ◽  
J.R. Dahn
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Surface Roughness ◽  
Atomic Force Microscopy ◽  
Alloy Film ◽  
Force Microscopy ◽  
Atomic Force ◽  
Direct Proportionality ◽  
Roughness Measurements

Measuring the changing thickness of a thin film, without a reference, using an atomic force microscope (AFM) is problematic. Here, we report a method for measuring film thickness based on in situ monitoring of surface roughness of films as their thickness changes. For example, in situ AFM roughness measurements have been performed on alloy film electrodes on rigid substrates as they react with lithium electrochemically. The addition (or removal) of lithium to (or from) the alloy causes the latter to expand (or contract) reversibly in the direction perpendicular to the substrate and, in principle, the change in the overall height of these materials is directly proportional to the change in roughness. If the substrate on which the film is deposited is not perfectly smooth, a correction to the direct proportionality is needed and this is also discussed.

Improved performance of co-sputtered Ni–Ti oxide films for all-solid-state electrochromic devices

RSC Advances ◽  
2016 ◽  
Vol 6 (112) ◽  
pp. 111148-111160 ◽  
Author(s):  
Dongmei Dong ◽  
Wenwen Wang ◽  
Guobo Dong ◽  
Fan Zhang ◽  
Hang Yu ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Force Microscopy ◽  
Electron Spectroscopy ◽  
X Ray Diffraction ◽  
Electrochromic Devices ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Direct Current Magnetron Sputtering ◽  
Improved Performance

Thin films of Ni–Ti oxide were co-sputtered by reactive direct current magnetron sputtering and their structures, morphologies, and compositions were investigated by X-ray diffraction, atomic force microscopy and X-ray photo-electron spectroscopy.

Brittle Behaviour in Aspirin Crystals: Evidence of Spalling Fracture

2020 ◽  
Author(s):  
Benjamin P. A. Gabriele ◽  
Craig J. Williams ◽  
Douglas Stauffer ◽  
Brian Derby ◽  
Aurora J. Cruz-Cabeza
Keyword(s):  
Surface Roughness ◽  
Atomic Force Microscopy ◽  
Single Crystals ◽  
Spalling Fracture ◽  
Force Microscopy ◽  
Atomic Force ◽  
Afm Imaging

<div> <div> <div> <p>Single crystals of aspirin form I were cleaved and indented on their dominant face. Upon inspection, it was possible to observe strongly anisotropic shallow lateral cracks due to the extreme low surface roughness after cleavage. Atomic Force Microscopy (AFM) imaging showed spalling fractures nucleating from the indent corners, forming terraces with a height of one or two interplanar spacings d100. The formation of such spalling fractures in aspirin was rationalised using basic calculations of attachment energies, showing how (100) layers are poorly bonded when compared to their relatively higher intralayer bonding. An attempt at explaining the preferential propagation of these fractures along the [010] direction is discussed. </p> </div> </div> </div>

Brittle Behaviour in Aspirin Crystals: Evidence of Spalling Fracture

2020 ◽  
Author(s):  
Benjamin P. A. Gabriele ◽  
Craig J. Williams ◽  
Douglas Stauffer ◽  
Brian Derby ◽  
Aurora J. Cruz-Cabeza
Keyword(s):  
Surface Roughness ◽  
Atomic Force Microscopy ◽  
Single Crystals ◽  
Spalling Fracture ◽  
Force Microscopy ◽  
Atomic Force ◽  
Afm Imaging

<div> <div> <div> <p>Single crystals of aspirin form I were cleaved and indented on their dominant face. Upon inspection, it was possible to observe strongly anisotropic shallow lateral cracks due to the extreme low surface roughness after cleavage. Atomic Force Microscopy (AFM) imaging showed spalling fractures nucleating from the indent corners, forming terraces with a height of one or two interplanar spacings d100. The formation of such spalling fractures in aspirin was rationalised using basic calculations of attachment energies, showing how (100) layers are poorly bonded when compared to their relatively higher intralayer bonding. An attempt at explaining the preferential propagation of these fractures along the [010] direction is discussed. </p> </div> </div> </div>

Atomic force microscopy of in situ deformed nickel thin films

1999 ◽  
Vol 353 (1-2) ◽  
pp. 194-200 ◽  
Author(s):  
C. Coupeau ◽  
J.F. Naud ◽  
F. Cleymand ◽  
P. Goudeau ◽  
J. Grilhé
Keyword(s):  
Thin Films ◽  
Atomic Force Microscopy ◽  
Force Microscopy ◽  
Nickel Thin Films ◽  
Atomic Force
Sign in / Sign up

Export Citation Format

Share Document