scholarly journals Three-dimensional modelling of thermal stress in floating zone silicon crystal growth

2018 ◽  
Vol 355 ◽  
pp. 012005
Author(s):  
Matiss Plate ◽  
Armands Krauze ◽  
Jānis Virbulis
Keyword(s):  
Thermal Stress ◽  
Crystal Growth ◽  
Silicon Crystal ◽  
Three Dimensional ◽  
Floating Zone

scholarly journals Growth angle and melt meniscus of the RF-heated floating zone in silicon crystal growth

2011 ◽  
Vol 314 (1) ◽  
pp. 43-47 ◽  
Author(s):  
Michael Wünscher ◽  
Anke Lüdge ◽  
Helge Riemann
Keyword(s):  
Crystal Growth ◽  
Silicon Crystal ◽  
Floating Zone ◽  
Growth Angle

Hydrodynamical aspects of the floating zone silicon crystal growth process

2014 ◽  
Vol 401 ◽  
pp. 120-123 ◽  
Author(s):  
Kirils Surovovs ◽  
Andris Muiznieks ◽  
Andrejs Sabanskis ◽  
Janis Virbulis
Keyword(s):  
Crystal Growth ◽  
Growth Process ◽  
Silicon Crystal ◽  
Floating Zone ◽  
Crystal Growth Process

Developments in floating zone silicon crystal growth

1995 ◽  
Author(s):  
W. Schroeder ◽  
H. Riemann ◽  
A. Luedge
Keyword(s):  
Crystal Growth ◽  
Silicon Crystal ◽  
Floating Zone

Three-dimensional modelling of dopant transport in gas and melt during FZ silicon crystal growth

2015 ◽  
Vol 51 (1) ◽  
pp. 157-170 ◽  
Author(s):  
A. Sabanskis ◽  
K. Suvorovs ◽  
J. Virbulis
Keyword(s):  
Crystal Growth ◽  
Silicon Crystal ◽  
Three Dimensional

scholarly journals 3D Numerical Analysis of the Asymmetric Three-Phase Line of Floating Zone for Silicon Crystal Growth

Crystals ◽  
2020 ◽  
Vol 10 (2) ◽  
pp. 121 ◽  
Author(s):  
Xue-Feng Han ◽  
Xin Liu ◽  
Satoshi Nakano ◽  
Hirofumi Harada ◽  
Yoshiji Miyamura ◽  
...  
Keyword(s):  
Heat Transfer ◽  
Silicon Crystal ◽  
Three Dimensional ◽  
Heat Transfer Fluid ◽  
Floating Zone ◽  
Phase Line ◽  
Three Phase ◽  
Em Field ◽  
Solid Liquid Interface ◽  
Solid Liquid

A numerical simulation has been carried out to study the asymmetric heat transfer, fluid flow, and three-phase line to explain the phenomenon of the spillage of the melt in floating zone (FZ) silicon growth. A three-dimensional high-frequency electromagnetic (EM) field is coupled with the heat transfer in the melt and crystal calculation domains. The current density along the three-phase line is investigated to demonstrate the inhomogeneous heating along the three-phase line. The asymmetric heating is found to affect the flow pattern and temperature distribution of the melt. The three-dimensional solid–liquid interface results show that, below the current supplies, the interface is deflected due to strong heating below the current supplies. The calculated asymmetric three-phase line shows a similar trend as the experimentally observed results. The results indicate that the re-melting and spillage phenomenon could occur below the current supplies.

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