Mechanism for generating interstitial atoms by thermal stress during silicon crystal growth

2019 ◽  
Vol 65 (1) ◽  
pp. 36-46
Author(s):  
Takao Abe ◽  
Toru Takahashi ◽  
Koun Shirai
Keyword(s):  
Thermal Stress ◽  
Crystal Growth ◽  
Silicon Crystal ◽  
Interstitial Atoms

Thermal stress induced void formation during 450 mm defect free silicon crystal growth and implications for wafer inspection

2013 ◽  
Vol 102 (8) ◽  
pp. 082108 ◽  
Author(s):  
E. Kamiyama ◽  
J. Vanhellemont ◽  
K. Sueoka ◽  
K. Araki ◽  
K. Izunome
Keyword(s):  
Thermal Stress ◽  
Crystal Growth ◽  
Silicon Crystal ◽  
Void Formation ◽  
Wafer Inspection ◽  
Free Silicon

The development of an inspection system for defects in silicon crystal growth

2013 ◽  
Vol 20 (2) ◽  
pp. 224-226 ◽  
Author(s):  
Ya-Cheng Liu ◽  
Hsin-Yi Tsai ◽  
Min-Wei Hung ◽  
Kuo-Cheng Huang
Keyword(s):  
Crystal Growth ◽  
Silicon Crystal ◽  
Inspection System

Float-Zone silicon crystal growth at reduced RF frequencies

2012 ◽  
Vol 360 ◽  
pp. 43-46 ◽  
Author(s):  
H.-J. Rost ◽  
R. Menzel ◽  
A. Luedge ◽  
H. Riemann
Keyword(s):  
Crystal Growth ◽  
Silicon Crystal ◽  
Float Zone

Advanced approach for oxygen transport simulation in Cz silicon crystal growth

2021 ◽  
pp. 126493
Author(s):  
D. Borisov ◽  
V. Artemyev ◽  
V. Kalaev ◽  
A. Smirnov ◽  
A. Kuliev ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Oxygen Transport ◽  
Silicon Crystal ◽  
Transport Simulation
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