Hydrodynamical aspects of the floating zone silicon crystal growth process

The present work is aimed at developing an axial symmetric thermal analysis model for designing the hot-zone of a silicon crystal growth furnace. An analysis model is developed which can be used to predict the approximate pulling rate and power consumption during silicon crystal growth process when utilizing the Czochralski (CZ) method. In addition, the effectiveness of this analysis model is experimentally confirmed.

Download Full-text

Numerical Simulation of the Effect of Heater Position on the Oxygen Concentration in the CZ Silicon Crystal Growth Process

International Journal of Photoenergy ◽

10.1155/2012/395235 ◽

2012 ◽

Vol 2012 ◽

pp. 1-6 ◽

Cited By ~ 7

Author(s):

Ying-Yang Teng ◽

Jyh-Chen Chen ◽

Chung-Wei Lu ◽

Cheng-Chuan Huang ◽

Wan-Ting Wun ◽

...

Keyword(s):

Crystal Growth ◽

Oxygen Concentration ◽

Concentration Distribution ◽

Growth Process ◽

Silicon Crystal ◽

Crucible Wall ◽

Crystal Growth Process ◽

Silicon Melt ◽

Average Oxygen Concentration ◽

Crystal Interface

We perform numerical simulations to analyze the effect of the position of the heater on the thermal and flow fields and the oxygen concentration distribution during the industrial Cz silicon crystal growth process. The amount of oxygen released from the silica crucible to the silicon melt during the growth process can be lowered by adjusting the heater position to decrease the temperature on the crucible wall. During growth of the crystal body, there is a significant decrease in the gradient of the oxygen concentration along the melt-crystal interface due to the stronger Taylor-Proudman vortex, which is generated by the crucible and crystal rotation. There is a significant reduction in the average oxygen concentration at the melt-crystal interface for longer crystal lengths because of the lower wall temperature, smaller contact surface between the crucible wall and the melt and the stronger Taylor-Proudman vortex.

Download Full-text

Numerical Modeling and Control of the Dynamic Single Silicon Crystal Growth Process

IEEE Transactions on Semiconductor Manufacturing ◽

10.1109/tsm.2021.3049803 ◽

2021 ◽

pp. 1-1

Author(s):

Ni Zhang ◽

Ding Liu ◽

Yin Wan

Keyword(s):

Numerical Modeling ◽

Crystal Growth ◽

Growth Process ◽

Silicon Crystal ◽

Modeling And Control ◽

Crystal Growth Process ◽

And Control

Download Full-text

Silicon crystal growth process

Solar PV Power ◽

10.1016/b978-0-12-817626-9.00002-2 ◽

2021 ◽

pp. 31-52

Author(s):

Rabindra Satpathy ◽

Venkateswarlu Pamuru

Keyword(s):

Crystal Growth ◽

Growth Process ◽

Silicon Crystal ◽

Crystal Growth Process

Download Full-text

In situ temperature profile measurements with high-energy X-rays as a probe of optical floating zone crystal growth environment

Journal of Applied Crystallography ◽

10.1107/s1600576720007062 ◽

2020 ◽

Vol 53 (4) ◽

pp. 982-990

Author(s):

Jonathan J. Denney ◽

Yusu Wang ◽

Adam A. Corrao ◽

Guanglong Huang ◽

David Montiel ◽

...

Keyword(s):

Crystal Growth ◽

Growth Process ◽

High Energy ◽

Air Cooling ◽

Temperature Profiles ◽

Measured Temperature ◽

X Rays ◽

Floating Zone ◽

Growth Environment ◽

Crystal Growth Process

The ability of optical floating zone (OFZ) furnaces to rapidly produce large single crystals of complex emerging materials has had a transformative effect on many scientific fields that require samples of this type. However, the crystal growth process within the OFZ furnace is not well understood owing to the challenges involved in monitoring the high-temperature crystal growth process. Novel beamline-compatible optical furnaces that approximate the inhomogeneous growth environment within an OFZ furnace have been fabricated and tested in high-energy synchrotron beamlines. It is demonstrated that temperature profiles can be effectively extracted from powder diffraction data collected on polycrystalline ceramic rods heated at their tip. Furthermore, these measured temperature profiles can be accurately reproduced using a heat-transfer model that accounts for solid-state thermal conduction, partial sample lamp power absorption, convective air cooling and radiative cooling, allowing key thermal parameters such as thermal conductivity to be extracted from experimental data.

Download Full-text