scholarly journals Conductive AFM study of the electronic properties of individual epitaxial GaN nanowires

2019 ◽  
Vol 699 ◽  
pp. 012047
Author(s):  
V Sharov ◽  
A Bolshakov ◽  
V Fedorov ◽  
K Yu Shugurov ◽  
A M Mozharov ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Conductive Afm ◽  
Gan Nanowires

scholarly journals Atomic and electronic properties of GaN nanowires

2012 ◽  
Vol 28 ◽  
pp. 17-21 ◽  
Author(s):  
T.R. Vilela ◽  
H. W. Leite Alves
Keyword(s):  
Electronic Properties ◽  
Gan Nanowires

The electronic properties of phosphorus-doped GaN nanowires from first-principle calculations

2014 ◽  
Vol 596 ◽  
pp. 92-97 ◽  
Author(s):  
Nannan Fu ◽  
Enling Li ◽  
Zhen Cui ◽  
Deming Ma ◽  
Wei Wang ◽  
...  
Keyword(s):  
Electronic Properties ◽  
First Principle ◽  
First Principle Calculations ◽  
Gan Nanowires ◽  
Phosphorus Doped

Electronic properties of axial In $$_x$$ x Ga $$_{1-x}$$ 1 - x N insertions in GaN nanowires

2015 ◽  
Vol 14 (2) ◽  
pp. 464-468 ◽  
Author(s):  
Oliver Marquardt ◽  
Lutz Geelhaar ◽  
Oliver Brandt
Keyword(s):  
Electronic Properties ◽  
Gan Nanowires

Stability and Electronic Properties of GaN Nanowires—An Ab-Initio Approach

2008 ◽  
Vol 5 (4) ◽  
pp. 635-638 ◽  
Author(s):  
Pankaj Srivastava ◽  
Satyendra Singh ◽  
Abhay Mishra
Keyword(s):  
Ab Initio ◽  
Electronic Properties ◽  
Gan Nanowires

Modification of the electronic properties of GaN nanowires by Mn doping

2007 ◽  
Vol 91 (8) ◽  
pp. 082109 ◽  
Author(s):  
Xihong Chen ◽  
Seung Joon Lee ◽  
Martin Moskovits
Keyword(s):  
Electronic Properties ◽  
Mn Doping ◽  
Gan Nanowires

Structural and electronic properties of ZnO/GaN heterostructured nanowires from first-principles study

2016 ◽  
Vol 18 (4) ◽  
pp. 3097-3102 ◽  
Author(s):  
Yang Zhang ◽  
Dang-Qi Fang ◽  
Sheng-Li Zhang ◽  
Rao Huang ◽  
Yu-Hua Wen
Keyword(s):  
Electronic Properties ◽  
First Principles ◽  
Spatial Separation ◽  
Gan Nanowires ◽  
First Principles Study ◽  
Structural And Electronic Properties

An effective spatial separation of electrons and holes in biaxial heterostructured ZnO/GaN nanowires.

Structural and electronic properties of InGaN/GaN nanowires by the use of EELS

2012 ◽  
Vol 10 (1) ◽  
pp. 105-108 ◽  
Author(s):  
Maria-Marianna Soumelidou ◽  
Joseph Kioseoglou ◽  
Holm Kirmse ◽  
Philomela Komninou ◽  
Theodoros Karakostas
Keyword(s):  
Electronic Properties ◽  
Gan Nanowires ◽  
Structural And Electronic Properties
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