Investigations on the properties of filament generated in gas mixtures pumped by femtosecond laser pulses

2021 ◽  
Author(s):  
Chenrui Jing ◽  
Zhaohui Wang ◽  
Xiexing Qi
Keyword(s):  
Femtosecond Laser ◽  
Pulse Duration ◽  
Plasma Density ◽  
Noble Gases ◽  
Noble Gas ◽  
Laser Pulses ◽  
Gas Mixtures ◽  
Femtosecond Laser Pulses ◽  
Incident Pulse ◽  
Refractive Indices

Abstract In this paper, we compare the properties of filament generated in Ne-N2 mixture, pure N2, Kr-N2 mixture and Xe-N2 mixture pumped by femtosecond laser pulses systematically. Due to different nonlinear refractive indices and ioniation potentials of these noble gases, the clamped intensity and plasma density can be tuned in a certain range when a small amount of different noble gases is injected into pure N2. In addition, we also demonstrate that the higher proportional of noble gas and shorter incident pulse duration can benefit to manipulate the plasma density in a relative larger scale.

scholarly journals Micro/Nano Amorphization/Oxidation Of Silicon Induced By High Repetition Femtosecond Laser Pulses

2021 ◽  
Author(s):  
Amirkianoosh Kiani
Keyword(s):  
Solar Cell ◽  
Femtosecond Laser ◽  
Surface Temperature ◽  
Pulse Duration ◽  
Analytical Model ◽  
Repetition Rate ◽  
Crystalline Silicon ◽  
Laser Pulses ◽  
Femtosecond Laser Pulses ◽  
Laser Parameters

The main aim of this thesis is to develop a new method for direct micro/nano amorphization/oxidation of silicon using femtosecond laser irradiation and its applications in maskless lithography and solar cell fabrication. Amorphization and oxidation occur when crystalline silicon is exposed to the irradiation of femtosecond laser pulses below the ablation threshold. Mechanisms of morphization and oxidation were discussed and the surface temperature model was developed to study the relation between laser parameters and observed amorphization and oxidation. A systematic theoretical and experimental study of the influence of the laser parameters on the quality of amorphorized area and the size of the feature fabricated through amorphization has been studied. It was found that during the process of silicon amorphization and oxidation, the higher repetition rate of laser pulses yields smooth morphology with better repeatability. Increasing pulse duration and number of pulses were seen to increase the line width. However, increasing the number of pulses does not result in ablation of the target area. An analytical model was developed for the calculation of the average surface temperature after n-pulses. The effect of the laser pulse width was investigated by developing an analytical model for the calculation of the non-dimensional surface temperature with various pulse widths. It was found from experimental and analytical results that for a constant power and repetition rate, an increase in the pulse duration corresponds to a significant increase in the surface temperature. It results in an increase in the amount of modified material as well as improvement of light absorption in the case of amorphization. The main aim of this thesis is to develop a new method for direct micro/nano amorphization/oxidation of silicon using femtosecond laser irradiation and its applications in maskless lithography and solar cell fabrication.Amorphization and oxidation occur when crystalline silicon is exposed to the irradiation of femtosecond laser pulses below the ablation threshold. Mechanisms of morphization and oxidation were discussed and the surface temperature model was developed to study the relation between laser parameters and observed amorphization and oxidation. A systematic theoretical and experimental study of the influence of the laser parameters on the quality of amorphorized area and the size of the feature fabricated through amorphization has been studied. It was found that during the process of silicon amorphization and oxidation, the higher repetition rate of laser pulses yields smooth morphology with better repeatability. Increasing pulse duration and number of pulses were seen to increase the line width. However, increasing the number of pulses does not result in ablation of the target area. An analytical model was developed for the calculation of the average surface temperature after n-pulses.The effect of the laser pulse width was investigated by developing an analytical model for the calculation of the non-dimensional surface temperature with various pulse widths. It was found from experimental and analytical results that for a constant power and repetition rate, an increase in the pulse duration corresponds to a significant increase in the surface temperature. It results in an increase in the amount of modified material as well as improvement of light absorption in the case of amorphization.The amorphous silicon and silicon oxide can act as an etch stop. Therefore, maskless lithography iis possible with the direct patterning (amorphization and oxidation) of crystalline silicon. Experimental results have proved the feasibility of the proposed concepts. The thin-film of amorphous silicon generated on the silicon substrate has a potential for use in photovoltaic devices and solar cell fabrication. In comparison with previous methods, the direct oxidation/amorphization of silicon induced by the femtosecond laser is a maskless single-step technique which offers a higher flexibility and reduced processing time.

scholarly journals Ultrafast dynamical process of Ge irradiated by the femtosecond laser pulses

2016 ◽  
Vol 4 ◽  
Author(s):  
Fangjian Zhang ◽  
Shuchang Li ◽  
Anmin Chen ◽  
Yuanfei Jiang ◽  
Suyu Li ◽  
...  
Keyword(s):  
Femtosecond Laser ◽  
Pulse Duration ◽  
Laser Fluence ◽  
Carrier Density ◽  
Laser Intensity ◽  
Great Influence ◽  
Laser Pulses ◽  
Femtosecond Laser Pulses ◽  
Lattice Temperature ◽  
Dynamical Process

The ultrafast dynamic process in semiconductor Ge irradiated by the femtosecond laser pulses is numerically simulated on the basis of van Driel system. It is found that with the increase of depth, the carrier density and lattice temperature decrease, while the carrier temperature first increases and then drops. The laser fluence has a great influence on the ultrafast dynamical process in Ge. As the laser fluence remains a constant value, though the overall evolution of the carrier density and lattice temperature is almost independent of pulse duration and laser intensity, increasing the laser intensity will be more effective than increasing the pulse duration in the generation of carriers. Irradiating the Ge sample by the femtosecond double pulses, the ultrafast dynamical process of semiconductor can be affected by the temporal interval between the double pulses.

scholarly journals Micro/Nano Amorphization/Oxidation Of Silicon Induced By High Repetition Femtosecond Laser Pulses

2021 ◽  
Author(s):  
Amirkianoosh Kiani
Keyword(s):  
Solar Cell ◽  
Femtosecond Laser ◽  
Surface Temperature ◽  
Pulse Duration ◽  
Analytical Model ◽  
Repetition Rate ◽  
Crystalline Silicon ◽  
Laser Pulses ◽  
Femtosecond Laser Pulses ◽  
Laser Parameters

The main aim of this thesis is to develop a new method for direct micro/nano amorphization/oxidation of silicon using femtosecond laser irradiation and its applications in maskless lithography and solar cell fabrication. Amorphization and oxidation occur when crystalline silicon is exposed to the irradiation of femtosecond laser pulses below the ablation threshold. Mechanisms of morphization and oxidation were discussed and the surface temperature model was developed to study the relation between laser parameters and observed amorphization and oxidation. A systematic theoretical and experimental study of the influence of the laser parameters on the quality of amorphorized area and the size of the feature fabricated through amorphization has been studied. It was found that during the process of silicon amorphization and oxidation, the higher repetition rate of laser pulses yields smooth morphology with better repeatability. Increasing pulse duration and number of pulses were seen to increase the line width. However, increasing the number of pulses does not result in ablation of the target area. An analytical model was developed for the calculation of the average surface temperature after n-pulses. The effect of the laser pulse width was investigated by developing an analytical model for the calculation of the non-dimensional surface temperature with various pulse widths. It was found from experimental and analytical results that for a constant power and repetition rate, an increase in the pulse duration corresponds to a significant increase in the surface temperature. It results in an increase in the amount of modified material as well as improvement of light absorption in the case of amorphization. The main aim of this thesis is to develop a new method for direct micro/nano amorphization/oxidation of silicon using femtosecond laser irradiation and its applications in maskless lithography and solar cell fabrication.Amorphization and oxidation occur when crystalline silicon is exposed to the irradiation of femtosecond laser pulses below the ablation threshold. Mechanisms of morphization and oxidation were discussed and the surface temperature model was developed to study the relation between laser parameters and observed amorphization and oxidation. A systematic theoretical and experimental study of the influence of the laser parameters on the quality of amorphorized area and the size of the feature fabricated through amorphization has been studied. It was found that during the process of silicon amorphization and oxidation, the higher repetition rate of laser pulses yields smooth morphology with better repeatability. Increasing pulse duration and number of pulses were seen to increase the line width. However, increasing the number of pulses does not result in ablation of the target area. An analytical model was developed for the calculation of the average surface temperature after n-pulses.The effect of the laser pulse width was investigated by developing an analytical model for the calculation of the non-dimensional surface temperature with various pulse widths. It was found from experimental and analytical results that for a constant power and repetition rate, an increase in the pulse duration corresponds to a significant increase in the surface temperature. It results in an increase in the amount of modified material as well as improvement of light absorption in the case of amorphization.The amorphous silicon and silicon oxide can act as an etch stop. Therefore, maskless lithography iis possible with the direct patterning (amorphization and oxidation) of crystalline silicon. Experimental results have proved the feasibility of the proposed concepts. The thin-film of amorphous silicon generated on the silicon substrate has a potential for use in photovoltaic devices and solar cell fabrication. In comparison with previous methods, the direct oxidation/amorphization of silicon induced by the femtosecond laser is a maskless single-step technique which offers a higher flexibility and reduced processing time.

Pulse duration effect on the distribution of energetic particles produced by intense femtosecond laser pulses irradiating solids

2001 ◽  
Vol 8 (8) ◽  
pp. 3718-3723 ◽  
Author(s):  
A. G. Zhidkov ◽  
A. Sasaki ◽  
I. Fukumoto ◽  
T. Tajima ◽  
T. Auguste ◽  
...  
Keyword(s):  
Femtosecond Laser ◽  
Pulse Duration ◽  
Laser Pulses ◽  
Energetic Particles ◽  
Femtosecond Laser Pulses ◽  
Duration Effect

Inorganic-organic Hybrid Materials for Real 3-D Sub-νm Lithography

2003 ◽  
Vol 780 ◽  
Author(s):  
R. Houbertz ◽  
J. Schulz ◽  
L. Fröhlich ◽  
G. Domann ◽  
M. Popall ◽  
...  
Keyword(s):  
Femtosecond Laser ◽  
Sol Gel ◽  
Laser Pulses ◽  
Femtosecond Laser Pulses ◽  
Hybrid Polymer ◽  
Organic Hybrid ◽  
Two Photon ◽  
Applied Technology ◽  
Scale Structures ◽  
Sol Gel Synthesis

AbstractReal 3-D sub-νm lithography was performed with two-photon polymerization (2PP) using inorganic-organic hybrid polymer (ORMOCER®) resins. The hybrid polymers were synthesized by hydrolysis/polycondensation reactions (modified sol-gel synthesis) which allows one to tailor their material properties towards the respective applications, i.e., dielectrics, optics or passivation. Due to their photosensitive organic functionalities, ORMOCER®s can be patterned by conventional photo-lithography as well as by femtosecond laser pulses at 780 nm. This results in polymerized (solid) structures where the non-polymerized parts can be removed by conventional developers.ORMOCER® structures as small as 200 nm or even below were generated by 2PP of the resins using femtosecond laser pulses. It is demonstrated that ORMOCER®s have the potential to be used in components or devices built up by nm-scale structures such as, e.g., photonic crystals. Aspects of the materials in conjunction to the applied technology are discussed.

Ablation of metals with femtosecond laser pulses

2001 ◽  
Author(s):  
K. H. Leong ◽  
T. Y. Plew ◽  
R. L. Maynard ◽  
A. A. Said ◽  
L. A. Walker
Keyword(s):  
Femtosecond Laser ◽  
Laser Pulses ◽  
Femtosecond Laser Pulses
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