Structural and optical properties of low temperature grown single crystalline GaN nanorods on flexible tungsten foil using laser molecular beam epitaxy

2019 ◽  
Vol 6 (8) ◽  
pp. 085919 ◽  
Author(s):  
Ch Ramesh ◽  
P Tyagi ◽  
A K Mauraya ◽  
M Senthil Kumar ◽  
S S Kushvaha
2015 ◽  
Vol 1118 ◽  
pp. 111-117
Author(s):  
Hui Min Jia ◽  
Ji Long Tang ◽  
Liang Chang ◽  
Dan Fang ◽  
Xuan Fang ◽  
...  

In this paper, Be-doped GaAs were grown by molecular beam epitaxy (MBE), by changing Be resource temperature, we obtained different doping concentration GaAs samples. The morphologies and electrics properties of the samples were investigated by AFM and Hall measurement. Especially, in low temperature and temperature dependent PL spectra, the Be acceptor related emission were recognized, with the doping concentration increasing, the Be acceptor related emission enhanced too.


1991 ◽  
Vol 69 (11) ◽  
pp. 7942-7944 ◽  
Author(s):  
K. T. Shiralagi ◽  
R. A. Puechner ◽  
K. Y. Choi ◽  
R. Droopad ◽  
G. N. Maracas

2017 ◽  
Vol 51 (2) ◽  
pp. 267-271 ◽  
Author(s):  
N. V. Kryzhanovskaya ◽  
Yu. S. Polubavkina ◽  
V. N. Nevedomskiy ◽  
E. V. Nikitina ◽  
A. A. Lazarenko ◽  
...  

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