Investigation of surface acoustic waves anisotropy on high-quality AlN/Sapphire grown by hydride vapor phase epitaxy

2019 ◽  
Vol 6 (9) ◽  
pp. 095903
Author(s):  
Wenxiu Dong ◽  
Xue Ji ◽  
Weifan Wang ◽  
Tengkun Li ◽  
Jun Huang ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Acoustic Waves ◽  
Surface Acoustic Waves ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
High Quality

Surface acoustic waves in semi-insulating Fe-doped GaN films grown by hydride vapor phase epitaxy

2014 ◽  
Vol 105 (6) ◽  
pp. 062108 ◽  
Author(s):  
Yingmin Fan ◽  
Zhenghui Liu ◽  
Gengzhao Xu ◽  
Haijian Zhong ◽  
Zengli Huang ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Acoustic Waves ◽  
Surface Acoustic Waves ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy

High-quality GaN crystals grown from double-polarity hydride vapor phase epitaxy and single-polarization regrowth

2019 ◽  
Vol 58 (SC) ◽  
pp. SC1019
Author(s):  
Tatsuya Ezaki ◽  
Yusuke Shigefuji ◽  
Narihito Okada ◽  
Kazuyuki Tadatomo
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
High Quality ◽  
Single Polarization

High quality thin GaN templates grown by hydride vapor phase epitaxy on sapphire substrates

2006 ◽  
Vol 88 (24) ◽  
pp. 241914 ◽  
Author(s):  
D. Martin ◽  
J. Napierala ◽  
M. Ilegems ◽  
R. Butté ◽  
N. Grandjean
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
High Quality ◽  
Sapphire Substrates

Properties of Ge-doped, high-quality bulk GaN crystals fabricated by hydride vapor phase epitaxy

2010 ◽  
Vol 312 (24) ◽  
pp. 3569-3573 ◽  
Author(s):  
Yuichi Oshima ◽  
Takehiro Yoshida ◽  
Kazutoshi Watanabe ◽  
Tomoyoshi Mishima
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
High Quality ◽  
Bulk Gan

High-quality InGaN MQW on low-dislocation-density GaN substrate grown by hydride vapor-phase epitaxy

1998 ◽  
Vol 189-190 ◽  
pp. 61-66 ◽  
Author(s):  
C Sasaoka ◽  
H Sunakawa ◽  
A Kimura ◽  
M Nido ◽  
A Usui ◽  
...  
Keyword(s):  
Dislocation Density ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
High Quality ◽  
Low Dislocation Density

scholarly journals Growth of High Quality GaN by Hydride Vapor Phase Epitaxy

2011 ◽  
Vol 54 (6) ◽  
pp. 369-375
Author(s):  
Akira USUI ◽  
Haruo SUNAKAWA ◽  
Norihiko SUMI ◽  
Kazutomi YAMAMOTO ◽  
Huiyuan GENG ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
High Quality

Hall mobility and carrier concentration in free-standing high quality GaN templates grown by hydride vapor phase epitaxy

2001 ◽  
Vol 45 (5) ◽  
pp. 711-715 ◽  
Author(s):  
D. Huang ◽  
F. Yun ◽  
M.A. Reshchikov ◽  
D. Wang ◽  
H. Morkoç ◽  
...  
Keyword(s):  
Carrier Concentration ◽  
Vapor Phase ◽  
Hall Mobility ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Free Standing ◽  
High Quality

The growth of high-quality and self-separation GaN thick-films by hydride vapor phase epitaxy

2012 ◽  
Vol 340 (1) ◽  
pp. 18-22 ◽  
Author(s):  
Weike Luo ◽  
Jiejun Wu ◽  
John Goldsmith ◽  
Yanhao Du ◽  
Tongjun Yu ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Thick Films ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
High Quality

Hydride vapor phase epitaxy growth of high-quality GaN film on in situ etched GaN template

2009 ◽  
Vol 63 (11) ◽  
pp. 943-945 ◽  
Author(s):  
Chaotong Lin ◽  
Guanghui Yu ◽  
Xinzhong Wang ◽  
Mingxia Cao ◽  
Haifeng Lu ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
High Quality ◽  
Gan Film

Macrodefect-free, large, and thick GaN bulk crystals for high-quality 2–6 in. GaN substrates by hydride vapor phase epitaxy with hardness control

2018 ◽  
Vol 57 (6) ◽  
pp. 065502 ◽  
Author(s):  
Hajime Fujikura ◽  
Taichiro Konno ◽  
Takayuki Suzuki ◽  
Toshio Kitamura ◽  
Tetsuji Fujimoto ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Bulk Crystals ◽  
High Quality
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