scholarly journals Enhancing reliability of InGaN/GaN light-emitting diodes by controlling the etching profile of the current blocking layer

2020 ◽  
Vol 7 (3) ◽  
pp. 036404
Author(s):  
Shui-Hsiang Su ◽  
Chun-Lung Tseng ◽  
Ching-Hsing Shen ◽  
I-Jou Hsieh ◽  
Yen-Sheng Lin
2013 ◽  
Vol 34 (7) ◽  
pp. 918-923 ◽  
Author(s):  
郭伟玲 GUO Wei-ling ◽  
俞鑫 YU Xin ◽  
刘建朋 LIU Jian-peng ◽  
樊星 FAN Xing ◽  
白俊雪 Bai Jun-xue

2012 ◽  
Vol 51 ◽  
pp. 082102 ◽  
Author(s):  
Keon Hwa Lee ◽  
Ki Man Kang ◽  
Gi Cheol Hong ◽  
Seung Hwan Kim ◽  
Woo Young Sun ◽  
...  

2000 ◽  
Author(s):  
Guohong Wang ◽  
Xiaoyu Ma ◽  
Yufang Zhang ◽  
Shutang Wang ◽  
Yuzhang Li ◽  
...  

Author(s):  
Liancheng Wang ◽  
Yiyun Zhang ◽  
Xiao Li ◽  
Zhiqiang Liu ◽  
Lian Zhang ◽  
...  

Vertical light-emitting diodes (VLEDs) with a highly reflective membrane (HRM) as current blocking layer (CBL) and a graphene transparent conductive layer (TCL) have been fabricated and characterized. High reflectance of HRM and high transmittance of graphene ensure less loss of the optical power. The VLEDs show improved optical output and less efficiency droop, thanks to the current spreading effect of HRM CBL and graphene TCL by preventing current crowding under the top electrode and thus increasing the internal and external quantum efficiency. With further acid modification, forward electrical characteristics of VLEDs are improved.


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