Enhancing reliability of InGaN/GaN light-emitting diodes by controlling the etching profile of the current blocking layer
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2013 ◽
Vol 34
(7)
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pp. 918-923
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2012 ◽
Vol 51
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pp. 082102
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Vol 469
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pp. 20120652
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Vol 33
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pp. 074008
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pp. 688-690
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2017 ◽
Vol 97
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Vol 61
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pp. 2427-2431
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