Current Gain and Voltage Gain in Hot Electron Transistors without Base Layer

2006 ◽  
Vol E89-C (7) ◽  
pp. 972-978 ◽  
Author(s):  
Y. MIYAMOTO
2015 ◽  
Vol 106 (3) ◽  
pp. 032101 ◽  
Author(s):  
Zhichao Yang ◽  
Yuewei Zhang ◽  
Digbijoy N. Nath ◽  
Jacob B. Khurgin ◽  
Siddharth Rajan

1987 ◽  
Vol 102 ◽  
Author(s):  
A. F. J. Levi ◽  
R. T. Tung ◽  
J. L. Batstone ◽  
M. Anzlowar

ABSTRACTWe have explored the possibility of fabricating a metal base transistor in the Si/CoSi2 material system. Utilizing recent advances in the growth of thin, pinhole free, CoSi2 layers on Si(111) we have measured the transistor characteristics of a Si/CoSi2/Si structure. The observed low common emitter current gain is attributed to an absence of current carrying states in the CoSi2 transistor base.


2017 ◽  
Vol 33 (1) ◽  
pp. 015018
Author(s):  
Geetak Gupta ◽  
Elaheh Ahmadi ◽  
Donald J Suntrup ◽  
Umesh K Mishra

Nano Letters ◽  
2015 ◽  
Vol 15 (12) ◽  
pp. 7905-7912 ◽  
Author(s):  
Carlos M. Torres ◽  
Yann-Wen Lan ◽  
Caifu Zeng ◽  
Jyun-Hong Chen ◽  
Xufeng Kou ◽  
...  

2016 ◽  
Vol 108 (19) ◽  
pp. 192101 ◽  
Author(s):  
Zhichao Yang ◽  
Yuewei Zhang ◽  
Sriram Krishnamoorthy ◽  
Digbijoy N. Nath ◽  
Jacob B. Khurgin ◽  
...  

2015 ◽  
Vol 36 (5) ◽  
pp. 436-438 ◽  
Author(s):  
Zhichao Yang ◽  
Digbijoy N. Nath ◽  
Yuewei Zhang ◽  
Jacob B. Khurgin ◽  
Siddharth Rajan

1981 ◽  
Vol 17 (17) ◽  
pp. 620 ◽  
Author(s):  
J.M. Shannon ◽  
A. Gill

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